20N40G-T47-T

20N40 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-623.b 400V, 23A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N40 is generally applied in high efficiency switch mode power supplies. „ FEATURES * RDS(ON)=0.2Ω @ VGS=10V,ID=11.5A * Low Gate Charge (Typical 46nC) * Low C RSS (Typical 25pF) * High Switching Speed „ SYMBOL „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 20N40L-T47-T 20N40G-T47-T TO-247 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

20N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 2 3 . b „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 400 V Gate-Source Voltage V GSS ±30 V TC=25°C 23 A Continuous TC=100°C ID 13.8 A Drain Current Pulsed (Note 2) I DM 92 A Avalanche Current (Note 2) I AR 23 A Single Pulsed (Note 3) E AS 1190 mJ Avalanche Energy Repetitive (Note 2) E AR 23.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 235 W Derate above 25°C PD 1.8 W/°C Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature 3. L = 4.5mH, I AS = 23A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. I SD ≤ 23A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C/W J u n c t i o n t o C a s e θJC 0.53 °C/W

20N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 2 3 . b „ ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 400 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current I DSS V DS=400V, VGS=0V 10 µA Forward V GS=+30V, VDS=0V +100 nAGate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=11.5A 0.15 0.2 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2280 3030 pF Output Capacitance C OSS 370 490 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 25 38 pF SWITCHING PARAMETERS Total Gate Charge at 10V Q G(TOT) 46 60 nC Gate to Source Charge Q GS 13 nC Gate to Drain Charge Q GD VDS=320V, ID=23A (Note 1, 2) 18 nC Turn-ON Delay Time t D(ON) 40 90 ns Rise Time t R 92 195 ns Turn-OFF Delay Time t D(OFF) 120 250 ns Fall-Time t F VDS=200V, ID=23A, RG=25Ω (Note 1, 2) 75 160 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 23 A Maximum Body-Diode Pulsed Current I SM 92 A Drain-Source Diode Forward Voltage V SD I SD=23A, VGS=0V 1.5 V Body Diode Reverse Recovery Time t rr 110 ns Body Diode Reverse Recovery Charge Q RR ISD=23A, VGS=0V, dIF/dt=100A/µs (Note 1) 0.3 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially Independent of Operating Temperature Typical Characteristics

20N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 2 3 . b „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

20N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 2 3 . b „ TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

20N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 2 3 . b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.