20N06 UMW | Alldatasheet
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VDS =60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V Advanced TrenchTechnology Excellent RDS(ON) andLowGateCharge Leadfreeproduct isacquired Application Load Switch PowermanagementP ackageMarking andOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth Quantity UMW 20N06 TO-252 330mm 12mm 2500 Absolute MaximumRatings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 60 V Gate-SourceVoltage VGS ±20 V DrainCurrent-ContinuousNote3 TC=25℃ ID A20 TC=100℃ 14 A Drain Current-PulsedNote1 IDM 120 A AvalancheEnergyNote4 EAS 72 mJ Maximum Power Dissipation TC=25℃ PD 55 W Storage TemperatureRange TSTG -55 to +150 ℃ Operating Junction TemperatureRange TJ -55 to +150 ℃ Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction-to-Case RθJC - - 2.7 ℃/W UMW UMW 20N06 R 1www.umw-ic.com 友台半导体有限公司 UMW 20N06 UMW 20N06
ElectricalCharacteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceBreakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero GateVoltage DrainCurrent IDSS VDS=60V,VGS=0V - - 1 uA Gate-BodyLeakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit GateThreshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 2.5 V Drain-SourceOn-State Resistance RDS(ON) VGS=10V,IDS=15A - 23 29 mΩ VGS=4.5V,IDS=10A - 29 40 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit InputCapacitance CiSS VDS=25V,VGS=0V, f=1MHz - 1562 - pFOutputCapacitance COSS - 75.4 - ReverseTransfer Capacitance Crss - 66.8 - SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-OnDelayTime Td(on) VGS=10V,VDs=30V, RGEN=1.8Ω ID=15A - 7.5 - ns RiseTime tr - 21 - Turn-OffDelayTime Td(off) - 16 - FallTime tf - 23.5 - TotalGate Charge at10V Qg VDS=30V,IDS=15A, VGS=10V - 25 - nCGateto SourceGate Charge Qgs - 4.5 - Gateto Drain“Miller”Charge Qgd - 6.5 - DRAIN-SOURCEDIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceDiode ForwardVoltage VSD VGS=0V,IDS=15A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=15A di/dt=100A/us - 29 - nS Reverse RecoveryCharge Qrr - 45 - nC Notes: 1:Repetitive rating, pulsewidth limited bymaximum junction temperature. 2:Surface mountedon FR4Board,t≤10sec. 3:Pulse width≤300μs,duty cycle ≤2%. 4:EAS condition: L=0.5mH,VDD=30V,VG=10V,VGATE=60V,StartTJ=25℃. www.umw-ic.com 2 友台半导体有限公司 60VN-ChannelEnhancementModePowerMOSFET UMW UMW 20N06 R UMW 20N06
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