20JL2C41 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION sas _ IS9MAX. $3220.2_ e@ Repetitive Peak Reverse Voltage : VRRM=600V co J, 24 e Average Output Rectified Current : I9=20A “ (ar aN ie a © Ultra Fast Reverse-Recovery Time : tpp=50ns (Max.) 4) [OF 3 p ¢ 3 © Low Switching Losses and Output Noise. 5 4 jalae® MAXIMUM RATINGS 0283s | | | a i — CHARACTERISTIC SYMBOL sasi02, 5.45303 al Repetitive Peak Reverse Voltage | Vrrm | 600 | v_| H gt | lls Average Output Rectified Current es = Peak One Cycle Surge Forward Ips 100 (50Hz) A 1. ANODE Current (Sine Wave) bs 110 (60Hz2) 2. ANODE = 40~150 3. CATHODE Storage Temperature Range —40~150 JEDEC _— [Screw Torque P08 | Nm | TOSHIBA —_12-16D1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 4.85¢ CHARACTERISTIC SYMBOL TEST CONDITION UNIT Peak Forward Voltage (Note 1) Ipm=10A [— | 20] v | Repetitive Peak Reverse Current _ (Note »| IRRM | VRRM=600V vaN Reverse Recovery time (Note 1) Ip=2A, di/dt=—50A/ ps [ — | 50] ns | Forward Recovery time (Note 1) Ip=1A | — | 150] ns | Thermal Resistance Rth (j-c) | DC Total, Junction to Case [| — | 15 [c/w] Note 1: A value of one cell. POLARITY MARKING

5 OUTRO

@ roy Lot Number , #2 CID-Month (Starting from Alphabet A) oe Year (Last Number of the Christian Era) Q61001EAA2 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications, Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1996-12-02 1/2

PR(AV) Vaan [|] | J 120° 7 | | . JERE 90° jaan

2 Jo TI ler 7/4 I

ip — up COoOoo Z yaauaae?/ eet ===— L mney, vero Se eeesesee g FH | Wavenoma CELL Sa===—s-ce g. VM | one 6 . pes eeteteteccze Bs \\saae s/n E === cap |_| ae [| Y, | J2LL é (a ZaenEe te) on te 2 ttt CA ge a WHA [| or eel Ey a =150°C -=2====== 2: [TY Ty }CTION é So e2eeceeeee eee’ Z LT oxo 8 | ze TTY TI [| cone a feos= er aeeee CI 2 Ly | fy Ey z. saaZe7cae _| | ; LY Ty i 20 as ins a7unasnnss : A come 10 & SS=s===== 5 ED Cl 8 oo seaeeaesee 2 (41 DUT RECT 5 4 FA7ARREERARIEE ‘ AVERAGE OUT! t EHH é ia anna 2s 92 i Sein z a ba Vv) Sete teat Pry 2 7 V1 i620 B Up ae | el G 2 VoLTAG! hE CoH a ost RWARD Tone cnt FAH an {| ay US FoI o1 aes ia INSTAN = 10 8 i eat eet I me MAK = macnouLan ee POE Cat .VEFOI Be mail ai ; AH Ee CE ae Nea 4.LIL aa eat UI

3 RR “Coxpuctios 32 Sty SSTESEE

2 SSN ON! Tea Co Ty i Bo NN KAI N@ a E EE te ea NAS YS I No] E Se cuiiaeeai Co mal af PAPAS [SI g este ere ge i NI NEN] in B ee 10 1000 3x NI YON [I 2 osb rH [TI 2 -4 N\\A re ee cena 100 a5 HN eee Cr z EEE » curmenn ko w eres One Catt

2 Pt 8 IED CUR Sa ONE ¢

2 ad 4 RECTIF 1 poe ia [| FN nn cuRRENT - Sy oe AV -ARD ¥) & 500; rT FORWARD GY s ft i sungg FoR cane So} CE | | HEH St a Hi “a PULL SIN 8 | teria Af TT Tan 26°C [| é fest, ence E “Ne Sc 2 Bas NI [| = poo ts {TSA ~ : TNC 3 HHP g2 PNR oan E “A Ml LT om < ENN S rT 5 od CIN SS Co 2 alll 30 50

2 Senco * gf ill VOLTAGE v0

. 1 V ; : pt Cor rs = 20 [tT LTT | 30 50 rts ute. No heanse's 9 é rH 10 AND 60H2 may rest rom te ur. Q 3 LES AT 50H four, prod rathers, * sume oe ress Be Bat a 1996-72-02 272 ly, a8 8 guide for giits of TOSH " ha tarts mae _ ation Sawise undes bject by implication o oe