GT20J321_06 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications

  • Fourth-generation IGBT
  • Enhancement mode type
  • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 μs (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : E off = 0.43 mJ (typ.)
  • Low saturation voltage: VCE (sat) = 2.0 V (typ.)
  • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC I C 20 Collector current 1 ms I CP 40 A DC I F 20 Emitter-collector forward current 1 ms I FM 40 A Collector power dissipation (Tc = 25°C) PC 45 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 2.78 °C/W Thermal resistance (diode) Rth (j-c) 4.23 °C/W Equivalent Circuit Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1C Weight: 1.7 g (typ.) Gate Emitter Collector Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 20J321 Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES V CE = 600 V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage VGE (OFF) I C = 2 mA, VCE = 5 V 3.5 ― 6.5 V Collector-emitter saturation voltage V CE (sat) I C = 20 A, VGE = 15 V ― 2.0 2.45 V Input capacitance Cies V CE = 10 V, VGE = 0, f = 1 MHz ― 3000 ― pF Turn-on delay time t d (on) ― 0.06 ― Rise time tr ― 0.04 ― Turn-on time ton ― 0.17 ― Turn-off delay time t d (off) ― 0.24 ― Fall time tf ― 0.04 ― Switching time Turn-off time toff ― 0.34 ― μs Turn-on switching loss Eon ― 0.40 ― Switching loss Turn-off switching loss E off Inductive Load VCC = 300 V, IC = 20 A VGG = +15 V, RG = 33 Ω (Note 1) (Note 2) ― 0.43 ― mJ Peak forward voltage VF I F = 20 A, VGE = 0 ― ― 2.1 V Reverse recovery time trr I F = 20 A, di/dt = −100 A/μs ― 100 ― ns Note 1: Switching time measurement circuit and input/output waveforms Note 2: Switching loss measurement waveforms 10% 90% VGE VCE IC Eoff Eon 0 5% RG IC VCE L VCC −VGE 10% 90% VGE VCE IC td (off) toff td (on) tr ton tf 10%10% 10% 90% 10% 90%

Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) IC – VGE Collector current I C (A) Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage V CE (sat) (V) −60 −20 20 60 100 140 IC = 5 A Common emitter VGE = 15 V 30 0 4 8 12 16 20 Common emitter Tc = 25°C 10 20 IC = 5 A 0 4 8 12 16 20 Common emitter Tc = 125°C IC = 5 A 0 4 8 12 16 20 Common emitter Tc = −40°C 10 20 IC = 5 A 0 1 2 3 4 5 VGE = 7 V Common emitter Tc = 25°C 20 0 4 8 12 16 20 −40 Tc = 125°C Common emitter VCE = 5 V

Collector current I C (A) Switching loss E on, Eoff (mJ) Switching time t off, tf, td (off) ( μs) Switching time t on, tr, td (on) – RG Switching time t on, tr, td (on) ( μs) Switching time t on, tr, td (on) – IC Switching time t on, tr, td (on) ( μs) Switching time t off, tf, td (off) – RG Switching time t off, tf, td (off) ( μs) Collector current I C (A) Switching time t off, tf, td (off) – IC Switching loss E on, Eoff – RG Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff (mJ) Gate resistance R G ( Ω) Gate resistance R G ( Ω) Gate resistance R G ( Ω) Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) 4 0 0.3 0.01 0.03 8 12 16 20 tr ton 0.1 td (off) Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 2) 1 10 30 100 300 10003 0.1

0.3 Eoff

0.1 0.3 0.01 1 10 30 100 300 10003 0.03 toff tf Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) td (off) 4 0 0.3 0.01 0.03 8 12 16 20 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) tf toff td (off) 4 0 0.03 8 12 16 20

0.1 Eoff

VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 2) 0.3 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) 0.3 0.1 0.01 1 10 30 100 300 10003 0.03 ton td (on) tr

Collector current I C (A) Reverse recovery current I rr (A) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Forward voltage V F ( V ) IF – VF Forward current I F (A) Reverse recovery time t rr (ns) Forward current I F (A) trr, Irr – IF Collector-emitter voltage V CE (V) Safe Operating Area Collector-emitter voltage V CE (V) Reverse Bias SOA Collector current I C (A) −40 Tc = 125°C Common collector VGE = 0 0.5 1 1.5 2 3 2.5 300 VCE = 100 V 200 500 Common emitter RL = 15 Ω Tc = 25°C 100 200 300 400 40 60 100 140 120 80 20 Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C 1000 100 300 Irr trr 100 51 0 2015 Tj ≤ 125°C VGE = 15 V RG = 33 Ω 0.1 100 0.3 3 10 30 300 100 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C Cres Coes Cies 10000 100 300 1000 3000 10 100 300 1000303 *: Single pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 μs* 50 μs* 1 ms* 10 ms* DC operation IC max (continuous) IC max (pulse)* 0.3 3 10 30 300 100 0.1 100 1000

Pulse width t w ( s ) rth (t) – tw Transient thermal resistance r th (t) (°C/W) 10−5 10 −4 10 −2 10 −1 10 2 IGBT FRD 10−4 10−3 10−2 10−1 101 102 Tc = 25°C 100 10−3 10 0 10 1

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
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