20BF05 ZSELEC | Alldatasheet
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Features
e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y ! Low Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 100°C IO 2.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward Voltage @I F = 2.0A V FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 2.0 500 µA Revers e Rec overy Time (Note 1) trr T y pical Junction Capacitance (Note 2) Cj 25 pF T y pical Thermal Resistance (Note 3) R/G01JL 30 ° C/W Operat i ng and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ! Lead Fr ee: For RoHS / Lead Free Version ! Weight: 0.093 grams (approx.) E SMB /DO-214AA Dim M in Max A 3.30 3. B 4.06 4. C 1.96 2. D 0.15 0. E 5.00 5.59 F 2.00 2. G 0.10 0.20 H 0.76 1. All Di mensions in mm A B C D F H G Unit Sy mbol 20BF05 – 20BF100 20BF05 20BF05 – 20BF100 20BF10 20BF20 20BF40 20BF6 0 20BF8 0 20BF100
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note Pulse Generator (Note Device Under Test trr Settimebasefor10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise T ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig.
5 Reverse Recovery Time Characteristic and Test Circuit
(+) (+) (-) (-) 0.01 0.1 1.0 100 1000 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T = 100 Cj ° T = 25 Cj ° 0.01 0.1 1.0 0.4 0.8 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T - 25 Cj ° Pulse Width = 300 sm 1.2 1.6 2.0 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES A T 60Hz Fig. 3 Forward Surge Current Derating Curve Single Half Sine-Wave (JEDEC Method) T = 150 Cj ° 50 75 100 125 150 I AVERAGE FORWARD CURRENT (A)(A V), T,LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 2 of 2 6 0 1.0 2.0 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 20BF05 – 20BF100 20BF05-20BF20 20BF40 20BF60-20BF100 20BF05 – 20BF100