203N

FDZ203N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 7.5 A, 20 V. R DS(ON) = 18 mΩ @ VGS = 4.5 R DS(ON) = 30 mΩ @ VGS = 2.5 V
• Occupies only 4 mm 2 of PCB area. Less than 40% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when mounted to PCB
• Ultra-low Q g x RDS(ON) figure-of-merit.
• High power and current handling capability. GATE B o t t o m Index slot Top Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20 PD Power Dissipation (Steady State) (Note 1a) 1.6 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 67 °C/W RθJB Thermal Resistance, Junction-to-Ball (Note 1) 11 RθJC Thermal Resistance, Junction-to-Case (Note 1) 1 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 203N FDZ203N 7’’ 8mm 3000 units FDZ203N S D G

FDZ203N Rev.E6(W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 14 mV/°C IDSS Zero Gate Voltage Drain Current V DS = 16 V, V GS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward V GS = 12 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –12 V, V DS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 0.8 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, I D = 7.5 A VGS = 2.5 V, I D = 5.5 A VGS = 4.5 V, ID = 7.5 A, TJ=125°C mΩ ID(on) On–State Drain Current V GS = 4.5 V, V DS = 5 V 20 A gFS Forward Transconductance V DS = 10 V, I D = 7.5 A 33 S Dynamic Characteristics Ciss Input Capacitance 1127 pF Coss Output Capacitance 268 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 134 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 11 20 ns td(off) Turn–Off Delay Time 26 42 ns tf Turn–Off Fall Time VDD = 10V, I D = 1 A, VGS = 4.5 V, R GEN = 6 Ω 8 16 ns Qg Total Gate Charge 11 15 nC Qgs Gate–Source Charge 2 nC Qgd Gate–Drain Charge VDS = 10 V, I D = 7.5 A, VGS = 4.5 V 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 20 nS Qrr Diode Reverse Recovery Charge IF = 9A, diF/dt = 100 A/µs 14 nC Notes: the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 67 °C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 155 °C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ203N

FDZ203N Rev.E6(W) Dimensional Outline and Pad Layout FDZ203N

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Rev. I16 ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ Across the board. Around the world.™ The Power Franchise ® Programmable Active Droop™