201CNQ SMCDIODE | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
Circuit Diagram Applications Maximum Ratings: 175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals: Nickel plated The terminal hardware is supplied with the module. The mounting hardware is not supplied. Recommended is the use of ¼-20 or M6 screws with spring washer. This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request High current switching power supply Plating power supply Free-Wheeling diodes Reverse battery protection Converters UPS System Welding PRM4 (Non-Isolated)
Data Sheet N1188, Rev. C China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 201CNQ SERIES * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case(Perleg) RJC DCoperation 0.40 C/W Typical ThermalResistanceJunctionto Case(Perpackage) RJC DCoperation 0.20 C/W TypicalThermalResistance,caseto HeatSink Rcs Mountingsurface,smooth andgreased 0.08 C/W MountingTorque TM - Mounting Torque 3.84(min) 4.80(max) NmTerminal Torque 2.35(min) 3.43(max) ApproximateWeight wt - 91 g CaseStyle PRM4Non-Isolated Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @100A,Pulse,TJ =25C @200A,Pulse,TJ =25C 0.62 0.76 0.67 0.81 V VF2 @100A,Pulse,TJ =125C @200A,Pulse,TJ =125C 0.56 0.69 0.58 0.71 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR, TJ =25C 0.04 10 mA IR2 @VR =ratedVR, TJ =125C 10 90 mA JunctionCapacitance(Perleg) CT @VR =5V,TC =25C fSIG =1MHz 4310 5200 pF VoltageRateofChange dv/dt - - 10,000 V/s Thermal-Mechanical Specifications:
Data Sheet N1188, Rev. C China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 201CNQ SERIES Ratings and Characteristics Curves Marking Diagram Ordering Information Device Package Shipping 201CNQSERIES PRM4(Non-Isolated) (Pb-Free) 9pcs/box WhereXXXX is YYWW 201CNQ035 =Part name SS =SS YY =Year WW =Week Cautions:Molding resin EpoxyresinUL:94V-0
Data Sheet N1188, Rev. C China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 201CNQ SERIES Mechanical Dimensions PRM4 Non-Isolated(Millimeters/Inches) SYMBOL Millimeters Inches Min. Max. Min. Max. A 78.74 81.28 3.100 3.200 B 37.47 42.55 1.475 1.675 C 6.89 7.69 0.271 0.303 D 19.51 24.59 0.768 0.968 E 33.02 38.10 1.300 1.500 F 17.78 20.32 0.700 0.800 G 60.96 64.77 2.400 2.550 H 17.26 23.25 0.680 0.915 I 90.17 92.71 3.550 3.650 J 3.02 3.68 0.119 0.145 K 14.30 16.15 0.563 0.636 L 9.27 10.79 0.365 0.425 M 4.37 5.28 0.172 0.208 1/4-20 screws (Millimeters)
Data Sheet N1188, Rev. C China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 201CNQ SERIES DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..