KBP200-G COMCHIP | Alldatasheet
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Technical content
Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting position: Any Mechanical Data: Maximum Ratings and Electrical Characteristics Diffused Junction Low Forward Voltage Drop High Reliability High Current Capability High Surge Current Capability Ideal for Printed Circuit Boards Features: Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp KBP200-G thru 2010-G (RoHS Device) Silicon Bridge Rectifiers “-G” suffix designated RoHS compliant version Dim A B C D E G H J I Min. 14.22 10.67 11.68 4.57 3.60 2.16 12.70 0.76 1.52 Max 15.24 11.68 12.70 5.08 4.10 2.67 0.88 KBP All Dimension in mm D GE I A B J C H + ~ ~ - KBP Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ T A = 50ºC Non-Repetitive Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ I F=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t<8.3ms) Typical Thermal Resistance (Note3) Operating and Storage Temperature Range Typical Junction Capacitance per element (Note2) KBP 200-G KBP 201-G 100 KBP 202-G 200 140 KBP 204-G 400 280 2.0 1.1 500 -55 to +160 UNIT V V A A V uA A2S K/W ºC pF Symbol VRRM VRWM VR VR(RMS) Io IFSM VFM IRM I2t RθJA TJ, TSTG CJ KBP 206-G 600 420 KBP 208-G 800 560 KBP 2010-G 1000 700 Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm 2 copper pad.
2.0 1.5 1.0 0.5 Io, Average Rectified Current (A) T, Temperature (ºC) Flg1. Forward Current Derating Curve 1.0 0.1 Io, Instantaneous Fwd Current (A) VF, Instantaneous Fwd Voltage (V) Flg2. Typical Fwd Characteristics 1 10 100 1 10 100 100 IFSM, Peak Fwd Surge Current (A) Number of Cycles At 60Hz Flg3. Max Non-Repetitive Peak Fwd Surge Current 100 IJ, Junction Capacitance (pF) VR, Reverse Voltage (V) Flg 4. Typical Junction Capacitance TJ=25ºC TJ = 25ºC TJ = 150ºC Pulse Width =300 uS TJ=150ºC Single Half Sine Wave (JEDEC Nethod) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) KBP200-G thru 2010-G (RoHS Device) Silicon Bridge Rectifiers “-G” suffix designated RoHS compliant version
10,000 1000 100 1.0 0.1 0.01 IR, Instantaneous Reverse Current (mA) (A) Percent of Rated Peak Reverse Voltage (%) Flg5. Typical Reverse Characteristics Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) TJ = 150ºC TJ = 125ºC TJ = 25ºC TJ = 100ºC KBP200-G thru 2010-G (RoHS Device) Silicon Bridge Rectifiers “-G” suffix designated RoHS compliant version