200FXG13 TOSHIBA | Alldatasheet
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TOSHIBA 200FXG13,200FXH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 200FXG13, 200FXH13 HIGH SPEED RECTIFIER APPLICATIONS Unit in mm © Repetitive Peak Reverse Voltage : VRRM=3000V Dy e@ Average Forward Current : Ip(Av)=200A (a ~\\ i | | © Reverse Recovery Time (Tj=25°C) : trr=4.5us 8 Wy a 8 8 Ps, MAXIMUM RATINGS a CHARACTERISTIC SYMBOL | RATING | UNIT — , 605 Repetitive Peak Reverse Voltage Vrrm | 3000 | v_ | pio —— Non-Repetitive Peak Reverse SiS} ee 3 Voltage (Non-Repetitive<5ms, VRSM 3100 Vv <4 Pg gle T)=0~125°C) aa 4 opty Average Forward Current IF (AV: o — Peak One Cycle Surge Forward 4000 (50Hz) y A | zo0rxeis | 2oorxns | Current FSM 4400 (60Hz) | ~~] 200FXG13 | 200FXH13 Junction Temperature Range |_1_| avove_[earnove| Storage Temperature Range —40~125 CATHO NO [Serew Torque | SO | S| Nm | Weight : 200g
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION Repetitive Peak Reverse Current IgrM _|VRRM=3000V, T)=125°C | — | 40] ma | Peak Forward Voltage Ipm=630A (T}=25°C) |= [is] v | ; Tp=200A qa | — | 45 Reverse Recovery Time Ss y ter dip/at=100A/~s [Tj=195°° | — | 55] ” Thermal Resistance Junction to Case [| — | 0.16 [c/w] Note : Contact thermal resistance Rth (c-f)=0.04°C / W (Applied silicone grease) a61001EaA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction fal due tthe inherent eleccal sensi and wuerabity to physi tes. es the responsby ofthe buyer, when ang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1997-08-18 1/2
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z 40) 2 Bo ) tor e (77 TTT TT aL: oo 4 5 2 I dip/at Ter 3 8 |88 y ( ge Litt tT ty ft | i ae ° 400 300 7200 1600 32 0 30 100 300 RATE OF RISE OF FORWARD CURRENT ae RATE OF FALL oF FORWARD CURRENT di/dt (A/ ys) lip/dt (A/ ps) 1997-08-18 2/2