ST2009DHI STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE WHEELING DIODE ■ HIGH VOLTAGE CAPABILITY ■ HIGH SWITCHING SPEED ■ TIGTHER hfe CONTROL ■ IMPROVED RUGGEDNESS APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOR TVS

DESCRIPTION

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM December 2002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 600 V V EBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 10 A ICM Collector Peak Current (tp < 5 ms) 20 A IB Base Current 7 A P tot Total Dissipation at Tc = 25 oC5 5 W V isol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 2500 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ISOWATT218 RBE =35 Ω Typ.

R thj-case Thermal Resistance Junction-case Max 2.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) V CE = 1500 V V CE = 1500 V TC = 125 oC mA mA IEBO Emitter Cut-off Current (IC = 0) V EB = 4 V 70 210 mA V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.5 V V BE(sat)∗ Base-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.2 V hFE ∗ DC Current Gain I C = 1 A VCE = 5 V IC = 5 A VCE = 1 V IC = 5.5 A VCE = 5 V 5 V F Diode Forward Voltage IF = 5 A 1.5 2 V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 5 A IBon(END) = 1 A LBB(off) = 2 µH VBE(off) = -2.5 V f = 32 KHz 2.6 0.28 3.2 0.55 µ s µ s ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance ST2009DHI

Collector Emitter Saturation Voltage DC Current Gain Output Characteristics Base Emitter Saturation Voltage DC Current Gain ST2009DHI

Figure 1: Inductive Load Switching Test Circuit. Power Losses Switching Time Inductive Load RBSOA ST2009DHI

DIM. mm inch A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 0.75 0.95 0.030 0.037 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 F5 1.10 0.043 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638 L 9 0.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 P025C/B ISOWATT218 NARROW LEADS MECHANICAL DATA - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm ST2009DHI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com ST2009DHI