KA1L0380B FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Features

  • Precision fixed operating frequency
  • KA1L0380B/KA1L0380RB (50KHz)
  • KA1M0380RB (67KHz)
  • KA1H0380RB (100KHz)
  • Pulse by pulse over current limiting
  • Over load protection
  • Over voltage protection (Min. 23V)
  • Internal thermal shutdown function
  • Under voltage lockout
  • Internal high voltage sense FET
  • A u t o r e s t a r t ( KA1L0380RB/KA1M0380RB/KA1H0380RB)

Description

The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM control- ler IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over volt- age protection, temperature compensated precision current sources for loop compensation and fault protection circuit. Compared to discrete MOSFET and controller or RCC switch- ing converter solution, a SPS can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5µA 2.5R 1mA 0.1V OVER VOLTAGE S/D 7.5V 25V Thermal S/D S R Q Power on reset − L.E.B S R Q OSC Vref Internal bias Good logic SFET #2 DRAIN #1 GND #4 FB KA1L0380B/KA1L0380RB/KA1M0380RB/ KA1H0380RB Fairchild Power Switch(SPS)

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, V DD=50V, RG=25Ω , starting Tj=25°C 4. L=13 µH, starting Tj=25°C Parameter Symbol Value Unit Drain-source (GND) voltage (1) VDSS 800 V Drain-Gate voltage (RGS=1MΩ )V DGR 800 V Gate-source (GND) voltage V GS ±30 V Drain current pulsed (2) IDM 12 A DC Single pulsed avalanche energy (3) EAS 95 mJ Avalanche current(4) IAS 6A Continuous drain current (TC=25°C) I D 3.0 A DC Continuous drain current (TC=100°C) I D 2.1 A DC Supply voltage V CC 30 V Analog input voltage range V FB −0.3 to VSD V Total power dissipation PD 35 W Derating 0.28 W/ °C Operating temperature T OPR −25 to +85 °C Storage temperature T STG −55 to +150 °C

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS VGS=0V, ID=50µA 800 - - V Zero gate voltage drain current I DSS VDS=Max., Rating, VGS=0V -- 5 0 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static drain-source on resistance (Note) RDS(ON) VGS=10V, ID=1.5A - 4.0 5.0 Ω Forward transconductance (Note) gfs V DS=15V, ID=1.5A 1.5 2.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 779 - pFOutput capacitance Coss - 75.6 - Reverse transfer capacitance Crss - 24.9 - Turn on delay time td(on) V DD=0.5BVDSS, ID=3.0A (MOSFET switching time are essentially independent of operating temperature) -4 0- nS Rise time tr - 95 - Turn off delay time td(off) - 150 - Fall time tf - 60 - Total gate charge (gate-source+gate-drain) Qg V GS=10V, ID=3.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -- 3 4 nCGate-source charge Qgs - 7.2 - Gate-drain (Miller) charge Qgd - 12.1 - S 1 R----=

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Electrical Characteristics (CONTROL part) (Ta=25°C unless otherwise specified) Notes: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit REFERENCE SECTION Output voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C- 0 . 3 0 . 6 m V / °C OSCILLATOR SECTION Initial accuracy F OSC KA1L0380B 45 50 55 kHzKA1L0380RB 45 50 55 KA1M0380RB 61 67 73 KA1H0380RB 90 100 110 Frequency change with temperature (2) ∆F/∆T −25°C≤Ta≤+85°C- ±5 ±10 % PWM SECTION Maximum duty cycle Dmax KA1L0380B 74 77 80 %KA1L0380RB 74 77 80 KA1M0380RB 74 77 80 KA1H0380RB 64 67 70 FEEDBACK SECTION Feedback source current I FB Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA Shutdown delay current Idelay Ta=25 °C, 5V≤Vfb≤VSD 4.0 5.0 6.0 µA OVER CURRENT PROTECTION SECTION Over current protection I L(max) Max. inductor current 1.89 2.15 2.41 A UVLO SECTION Start threshold voltage Vth(H) - 14 15 16 V Minimum operating voltage Vth(L) After turn on 9 10 11 V TOTAL STANDBY CURRENT SECTION Start current I ST VCC=14V 0.1 0.3 0.45 mA Operating supply current (control part only) IOPR Ta=25°C 6 12 18 mA VCC zener voltage V Z ICC=20mA 30 32.5 35 V SHUTDOWN SECTION Shutdown Feedback voltage V SD -6 . 9 7 . 5 8 . 1 V Thermal shutdown temperature (Tj) (1) TSD - 140 160 - °C Over voltage protection voltage V OVP -2 3 2 5 2 8 V

Figure 13. Drain Source Turn-on Resistance

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Package Dimensions TO-220F-4L

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Package Dimensions (Continued) TO-220F-4L (Forming)

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Rating Fosc KA1L0380B-TU TO-220F-4L 800V, 3A 50kHz KA1L0380B-YDTU TO-220F-4L(Forming) KA1L0380RB-TU TO-220F-4L 800V, 3A 50kHzKA1L0380RB-YDTU TO-220F-4L(Forming) KA1M0380RB-TU TO-220F-4L 800V, 3A 67kHzKA1M0380RB-YDTU TO-220F-4L(Forming) KA1H0380RB-TU TO-220F-4L 800V, 3A 100kHzKA1H0380RB-YDTU TO-220F-4L(Forming)

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB

KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB 9/7/00 0.0m 001 Stock#DSxxxxxxxx  2000 Fairchild Semiconductor International LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.