KA1L0365R FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Precision Fixed Operating Frequency
  • KA1L0365R(50kHz), KA1M0365R(67kHz), KA1H0365R(100kHz)
  • Pulse by Pulse Over Current Limiting
  • Over Load Protection
  • Over V oltage Protection (Min. 23V)
  • Internal Thermal Shutdown Function
  • Under V oltage Lockout
  • Internal High V oltage Sense FET
  • A u t o R e s t a r t

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or R CC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5µA 2.5R 1mA 0.1V OVER VOLTAGE S/D 7.5V 25V Thermal S/D S R Q Power on reset − L.E.B S R Q OSC Vref Internal bias Good logic SFET #2 DRAIN #1 GND #4 FB KA1L0365R/KA1M0365R/KA1H0365R Fairchild Power Switch(FPS)

KA1L0365R/KA1M0365R/KA1H0365R Absolute Maximum Ratings Notes: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 41mH, V DD = 50V, RG = 25Ω , starting Tj = 25°C Parameter Symbol Value Unit Maximum Drain Voltage (1) VD,MAX 650 V Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (2) IDM 12 A DC Single Pulsed Avalanche Energy (3) EAS 358 mJ Continuous Drain Current (TC=25°C) I D 3.0 A DC Continuous Drain Current (TC=100°C) I D 2.4 A DC Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 75 W Darting 0.6 W/ °C Operating Ambient Temperature T A -25 to +85 °C Storage Temperature T STG -55 to +150 °C

KA1L0365R/KA1M0365R/KA1H0365R Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V -- 5 0 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=1.5A - 3.6 4.5 Ω Forward Transconductance (Note) gfs V DS=50V, ID=1.5A 2.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 720 - pFOutput Capacitance Coss - 40 - Reverse Transfer Capacitance Crss - 40 - Turn on Delay Time t d(on) VDD=0.5BVDSS, ID=3.0A (MOSFET switching time are essentially independent of operating temperature) - 150 - nSRise Time tr - 100 - Turn Off Delay Time t d(off) - 150 - Fall Time tf - 42 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=3.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -- 3 4 nCGate-Source Charge Qgs - 7.3 - Gate-Drain (Miller) Charge Qgd - 13.3 - S 1 R----=

KA1L0365R/KA1M0365R/KA1H0365R Electrical Characteristics (Control Part) (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START - 1 41 51 6 V Stop Threshold Voltage V STOP After turn on 9 10 11 V OSCILLATOR SECTION Initial Accuracy F OSC KA1L0365R 45 50 55 kHzKA1M0365R 61 67 73 KA1H0365R 90 100 110 Frequency Change With Temperature (2) ∆F/∆T- 2 5 °C ≤ Ta ≤ +85°C- ±5 ±10 % Maximum Duty Cycle Dmax KA1L0365R 74 77 80 %KA1M0365R 74 77 80 KA1H0365R 64 67 70 FEEDBACK SECTION Feedback Source Current I FB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD - 6.9 7.5 8.1 V Shutdown Delay Current Idelay Ta=25 °C, 5V ≤ Vfb ≤ VSD 4.0 5.0 6.0 µA REFERENCE SECTION Output Voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T- 2 5 °C ≤ Ta ≤ +85°C- 0 . 3 0 . 6 m V / °C CURRENT LIMIT (SELF-PROTECTION) SECTION Peak Current Limit I OVER Max. inductor current 1.89 2.15 2.41 A PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C Over Voltage Protection Voltage V OVP - 2 32 52 8 V TOTAL DEVICE SECTION Start-Up Current I START VCC=14V 0.1 0.3 0.4 mA Operating Supply Current (Control Part Only) IOP Ta=25°C 6 12 18 mA VCC Zener Voltage V Z ICC=20mA 30 32.5 35 V

Figure 13. Static Drain-Source on Resistance

KA1L0365R/KA1M0365R/KA1H0365R Package Dimensions TO-220F-4L

KA1L0365R/KA1M0365R/KA1H0365R Package Dimensions (Continued) TO-220F-4L(Forming)

KA1L0365R/KA1M0365R/KA1H0365R 8/25/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Rating Fosc KA1L0365R-TU TO-220F-4L 650V, 3A 50kHzKA1L0365R-YDTU TO-220F-4L(Forming) KA1M0365R-TU TO-220F-4L 650V, 3A 67kHzKA1M0365R-YDTU TO-220F-4L(Forming) KA1H0365R-TU TO-220F-4L 650V, 3A 100kHz KA1H0365R-YDTU TO-220F-4L(Forming)