KA1M0280RB FAIRCHILD | Alldatasheet
Document overview
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- PDF pages: 10
Technical content
Features
- Precision Fixed Operating Frequency
- KA1M0280RB (67kHz) , KA1H0280RB (100kHz)
- Pulse by Pulse Over Current Limiting
- Over Load Protection
- Over V oltage Protection (Min. 23V)
- Internal Thermal Shutdown Function
- Under V oltage Lockout
- Internal High V oltage Sense FET
- A u t o R e s t a r t
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or R CC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5µA 2.5R 1mA 0.1V OVER VOLTAGE S/D 7.5V 25V Thermal S/D S R Q Power on reset − L.E.B S R Q OSC Vref Internal bias Good logic SFET #2 DRAIN #1 GND #4 FB KA1M0280RB/KA1H0280RB Fairchild Power Switch(FPS)
Notes: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 51mH, V DD = 50V, RG = 25Ω , starting Tj = 25°C 4. L = 13µH, starting Tj = 25°C Parameter Symbol Value Unit Maximum Drain Voltage (1) VD,MAX 800 V Drain-Gate Voltage (RGS=1MΩ )V DGR 800 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (2) IDM 8.0 A DC Single Pulsed Avalanche Energy (3) EAS 90 mJ Avalanche Current (4) IAS 8A Continuous Drain Current (TC=25°C) I D 2.0 A DC Continuous Drain Current (TC=100°C) I D 1.3 A DC Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 35 W Darting 0.28 W/ °C Operating Ambient Temperature T A -25 to +85 °C Storage Temperature T STG -55 to +150 °C
Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 800 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V -- 5 0 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=1.0A - 5.6 7.0 Ω Forward Transconductance (Note) gfs V DS=50V, ID=1.0A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 250 - pFOutput Capacitance Coss - 52 - Reverse Transfer Capacitance Crss - 25 - Turn on Delay Time t d(on) VDD=0.5BVDSS, ID=2.0A (MOSFET switching time are essentially independent of operating temperature) -2 1- nSRise Time tr - 28 - Turn Off Delay Time t d(off) -7 7- Fall Time tf - 24 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=2.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -- 6 0 nCGate-Source Charge Qgs - 15 - Gate-Drain (Miller) Charge Qgd - 20 - S 1 R----=
Electrical Characteristics (CONTROL part) (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START - 1 41 51 6 V Stop Threshold Voltage V STOP After turn on 9 10 11 V OSCILLATOR SECTION Initial Accuracy F OSC KA1M0280RB 61 67 73 kHzKA1H0280RB 90 100 110 Frequency Change With Temperature (2) ∆F/∆T- 2 5 °C ≤ Ta ≤ +85°C- ±5 ±10 % Maximum Duty Cycle Dmax KA1M0280RB 74 77 80 %KA1H0280RB 64 67 70 FEEDBACK SECTION Feedback Source Current I FB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD - 6.9 7.5 8.1 V Shutdown Delay Current Idelay Ta=25 °C, 5V ≤ Vfb ≤ VSD 4.0 5.0 6.0 µA REFERENCE SECTION Output Voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T- 2 5 °C ≤ Ta ≤ +85°C- 0 . 3 0 . 6 m V / °C CURRENT LIMIT (SELF-PROTECTION) SECTION Peak Current Limit I OVER Max. inductor current 1.05 1.2 1.35 A PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C Over Voltage Protection Voltage V OVP - 2 32 52 8 V TOTAL DEVICE SECTION Start-Up Current I START VCC=14V 0.1 0.3 0.45 mA Operating Supply Current (Control Part Only) IOP Ta=25°C 6 12 18 mA VCC Zener Voltage V Z ICC=20mA 30 32.5 35 V
Figure 13. Static Drain-Source on Resistance
Package Dimensions (Continued) TO-220F-4L(Forming)
8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
TU : Non Forming Type YDTU : Forming Type Product Number Package Rating Fosc KA1M0280RB-TU TO-220F-4L 800V, 2A 67kHzKA1M0280RB-YDTU TO-220F-4L(Forming) KA1H0280RB-TU TO-220F-4L 800V, 2A 100kHzKA1H0280RB-YDTU TO-220F-4L(Forming)