STL19N60M6 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 14
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 PowerFLAT 8x8 HV package information
- 4.2 PowerFLAT 8x8 HV packing information
Features
Order code VDS RDS(on) max. ID STL19N60M6 600 V 308 mΩ 11 A
- Reduced switching losses
- Lower R DS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
- LLC converters
- Boost PFC converters
Description
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STL19N60M6 Product summary Order code STL19N60M6 Marking 19N60M6 Package PowerFLAT 8x8 HV Packing Tape and reel N-channel 600 V, 255 mΩ typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package STL19N60M6 Datasheet DS13180 - Rev 1 - December 2019 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data
- When mounted on FR-4 board of inch², 2oz Cu.
Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4. On/off states
- Defined by design, not subject to production test.
Table 5. Dynamic
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance
3 Test circuits
Figure 13. Switching times test circuit for resistive load Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 PowerFLAT 8x8 HV package information
Figure 19. PowerFLAT 8x8 HV package outline
Package information
Table 8. PowerFLAT 8x8 HV mechanical data Figure 20. PowerFLAT 8x8 HV footprint Note: All dimensions are in millimeters.
4.2 PowerFLAT 8x8 HV packing information
Figure 21. PowerFLAT 8x8 HV tape Note: All dimensions are in millimeters. Figure 22. PowerFLAT 8x8 HV package orientation in carrier tape
Figure 23. PowerFLAT 8x8 HV reel Note: All dimensions are in millimeters.
Revision history
Table 9. Document revision history 13-Dec-2019 1 First release.