19N10L-TA3-T VBSEMI | Alldatasheet

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Technical content

N-Channel 100-V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET  175 °C Junction Temperature  Low Thermal Resistance Package  100 % R g Tested

APPLICATIONS

 Isolated DC/DC Converters PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω)I D (A) 100 0.092 at VGS = 10 V 18 N-Channel MOSFET G D S Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. When Mounted on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless oth erwise noted Parameter Symbol Limit Unit Dr ain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID A TC = 125 °C 15 Pulsed Drain Current IDM 68 Avalanche Current L = 0.1 mH IAS 18 Single Pulse Avalanche Energyb EAS 200 mJ Maximum Power Dissipationb TC = 25 °C PD W TA = 25 °Cd 3.75 Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Uni t Junction-to-Ambient PCB Mount (TO-263)d RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.4 RoHS COMPLIANT T O-220AB Top View GD S 105 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 19N10L-TA3-T A ll data sheet.com

Notes: a. Pulse test; pulse wi dth ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless oth erwise noted Parameter Symbol Test Conditio ns Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Dr ain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A 0.127 ΩVGS = 10 V, ID = 20 A, TJ = 125 °C 0.110 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.121 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 930 pFOutput Capacitance Coss 260 Reverse Transfer Capacitance Crss 110 Total Gate Chargec Qg VDS = 100 V, VGS = 10 V, ID = 65 A nCGate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg 0.5 1.7 3.3 Ω Tur n-O n Delay Timec td(on) VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω nsRise Timec tr 120 Turn-Off Delay Timec td(off) 25 Fall Timec tf 50 Source-Drain Diode Ratings and C haracteristics TC = 25 °Cb Continuous Current IS 18 A Pulsed Current ISM 68 Forward Voltagea VSD IF = 65 A, VGS = 0 V 1.0 1.5 V Reverse Recove ry Time trr IF = 50 A, di/dt = 100 A/µs 130 200 ns Peak Rev erse Recovery Current IRM(REC) 81 2A Reverse Recovery Charge Qrr 0.52 1.2 µC 4.8 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 19N10L-TA3-T A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unle ss otherwise noted Output Characteristics Transco nductance Capacitance 0 2468 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 6 V 2 V - Drain Current (A)I D 5 V 3 V 120 150 180 0 20 40 60 80 100 120 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 200 400 600 800 1000 1200 1400 0 20 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Cur rent Gate Charge 100 120 140 012 34567 VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 25 °C - 55 °C TC = 125 °C 0.00 0.10 0.20 0.30 0.40 0 20 40 60 80 100 120 ID - Drain Current (A) VGS = 10 V - On-Resistance (Ω)rDS(on) 0 25 50 75 100 125 150 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 100 V ID = 65 A 40 60 80 100 120 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 19N10L-TA3-T A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless ot herwise noted On-Resistance vs. Junction Temperatur e Avalanche Current vs. Time rDS(on) - On-Resistance (Normalized) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 20 A tin (s) 1000 0.00001 0.001 0.1 1 0.1 (A) IDav 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Source-Drain Diod e Forward Voltage Drain Source Breakdown vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 0.3 0.6 0.9 1.2 TJ = 25 °CTJ = 150 °C 180 190 200 210 220 230 240 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (V)V(BR)DSS ID = 1.0 mA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 19N10L-TA3-T A ll data sheet.com

Maximum Avalanche and Drain Current vs. Case Tem perature 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) - Drain Current (A)I D Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS minimum V GS at which rDS(on) is specified 1000 0.1 1 10 1000 0.1 100 TC = 25 °C Single Pulse - Drain Current (A)I D 1 ms 10 ms 100 ms DC 10 µs 100 µs 100 rDS(on) Limited* Normalized Thermal Transient Imped ance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 19N10L-TA3-T A ll data sheet.com

  • M = 1.32 mm to 1.62 mm (dim ension inc luding protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 19N10L-TA3-T A ll data sheet.com