19N10

19N10 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 19N10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-261.a 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. „ FEATURES * RDS(ON) = 0.1Ω @VGS = 10 V * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( C RSS = typical 32pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain Lead-free: 19N10L Halogen-free: 19N10G „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing 19N10-TM3-T 19N10L-TM3-T 19N10G-TM3-T TO-251 G D S Tube

19N10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 6 1 . a „ ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ± 25 V Continuous Drain Current I D 15.6 A Pulsed Drain Current (Note 2) I DM 62.4 A Avalanche Current (Note 2) I AR 15.6 A Single Pulsed Avalanche Energy (Note 3) E AS 220 mJ Repetitive Avalanche Energy (Note 2) E AR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns Power Dissipation 50 W Derate above 25°C PD 0.4 W/°C Junction Temperature T J +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by T J(MAX) L=1.35mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction-to-Ambient θJA 110 /W ℃ Junction-to-Case θJC 2.5 /W ℃ „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=250µA 100 V Breakdown Voltage Temperature Coefficient ∆BVDSS / ∆TJ ID=250µA, Referenced to 25°C 0.1 V/°C Drain-Source Leakage Current I DSS VDS=100V, VGS=0V 1 µA Forward VGS=25V, VDS=0V 100Gate-Source Leakage Current Reverse IGSS VGS=-25V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) VGS=10V, ID=7.8A 0.078 0.1 Ω Forward Transconductance g FS VDS=40V, ID=7.8A (Note 1) 11 S DYNAMIC PARAMETERS Input Capacitance C ISS 600 780 pF Output Capacitance C OSS 165 215 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1.0 MHz 32 40 pF SWITCHING PARAMETERS Total Gate Charge Q G 19 25 nC Gate Source Charge Q GS 3.9 nC Gate Drain Charge Q GD VDS=80V, ID=19A, VGS=10V (Note 1, 2) 9.0 nC Turn-ON Delay Time t D(ON) 7.5 25 ns Turn-ON Rise Time t R 150 310 ns Turn-OFF Delay Time t D(OFF) 20 50 ns Turn-OFF Fall-Time t F VDD=50V, ID=19A, RG=25Ω (Note 1, 2) 65 140 ns

19N10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 6 1 . a „ ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD V GS=0V, IS=15.6A 1.5 V Maximum Body-Diode Continuous Current I S 15.6 A Maximum Pulsed Drain-Source Diode Forward Current ISM 62.4 A Body Diode Reverse Recovery Time t RR 78 ns Body Diode Reverse Recovery Charge Q RR VGS= 0V, IS=19A, dIF/dt=100A/μs (Note 1) 200 nC Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature

19N10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 6 1 . a „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

19N10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 6 1 . a „ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

19N10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 6 1 . a UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.