18TQ035S SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR - 18TQ035S(35) 18TQ045S(45) V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=105°C, rectangularwaveform 18 A PeakOneCycleNon-RepetitiveSurge Current IFSM 8.3ms,HalfSinepulse 390 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @5A,Pulse,TJ =25C 0.41 0.50 V VF2 @18A,Pulse,TJ =25C 0.50 0.60 V ReverseCurrentatDCcondition* IR1 @VR =ratedVR,,TJ =25C 0.08 2.5 mA IR2 @VR =ratedVR,TJ =125C 15 30 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz 680 1400 pF VoltageRateofChange dv/dt - - 10,000 V/s  150 C TJ operation  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Terminals finish: 100% Pure Tin  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection  Center tap configuration D2PAK

Data Sheet N2261, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 18TQ035S 18TQ045S Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case RJC DCoperation 6 C/W ApproximateWeight wt - 1.85 g CaseStyle D2PAK Thermal-Mechanical Specifications: Ratings and Characteristics Curves Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics Fig.3-Typical Instantaneous Forward Voltage Characteristics TJ=25℃ TJ=25℃ TJ=25℃ TJ=125℃ TJ=125℃

Data Sheet N2261, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 18TQ035S 18TQ045S Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Mechanical Dimensions D2PAK Symbol Dimensions in millimeters Min. Typical Max. A 4.47 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 c1 1.17 1.27 1.37 D 8.50 8.70 8.90 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.31 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.74 L1 1.12 1.27 1.42 L2 1.30 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4° Ordering Information Marking Diagram Device Package Shipping 18TQ035S 18TQ045S D2PAK 800pcs/reel Carrier Tape Specification D2PAK SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 WhereXXXXX isYYWWL 18 = ForwardCurrent (18A) TQ = DeviceType 35/45 =Reverse Voltage(45V) S =Packagetype SSG = SSG YY = Year WW =Week L = Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N2261, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 18TQ035S 18TQ045S DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionofthe datasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduringoperation oftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualpropertyclaimsorany otherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.