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UNISONIC TECHNOLOGIES CO., LTD 18T10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R52-A54.a 9A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanc ed technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, etc. FEATURES * RDS(ON)<0.16Ω @ VGS=10V * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 18T10L-TN3-T 18T10G-TN3-T TO-252 G D S Tube 18T10L-TN3-R 18T10G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source
18T10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous VGS @ 10V TC=25°C ID 9 A TC=100°C 5.6 A Pulsed (Note 1) I DM 30 A Total Power Dissipation TC=25°C PD 27.8 W TA=25°C 1.3 W Junction Temperature T J 150 °C Storage Temperature Range T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 4.5 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 100 V Drain-Source Leakage Current I DSS VDS=80V, VGS=0V 25 µA VDS=80V, VGS=0V, TJ=125°C 250 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse V GS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 1 3 V Static Drain-Source On-State Resistance (Note 3) RDS(ON) VGS=10V, ID=5A 160 m Ω VGS=4.5V, ID=1A 440 m Ω Forward Transconductance g FS V DS=10V, ID=5A 5 S DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 400 640 pF Output Capacitance C OSS 55 pF Reverse Transfer Capacitance C RSS 35 pF SWITCHING PARAMETERS Total Gate Charge (Note 3) Q G VGS=4.5V, VDS=80V, ID=5A 23 50 nC Gate to Source Charge Q GS 5.25 nC Gate to Drain ("Miller") Charge Q GD 5.5 nC Turn-ON Delay Time (Note 3) t D(ON) VDS=30V, ID=0.5A, RG=25Ω, VGS=10V 33 ns Rise Time t R 28 ns Turn-OFF Delay Time t D(OFF) 160 ns Fall-Time t F 45 ns SOURCE- DRAIN DIODE Forward On Voltage (Note 3) V SD I S=5A, VGS=0V 1.3 V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test.
18T10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 5 0 2 - A 5 4 . a TEST CIRCUITS AND WAVEFORMS 4.5V Charge QGS QGD QG Gate Charge Waveforms VGS Resistive Switching Waveforms VDS VGS 90% 10% td(ON) tR tFtd(OFF) tON tOFF UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.