18N60 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD 18N60 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-221.Aa POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 400mΩ @VGS = 10 V * Ultra low gate charge ( typical 50nC ) * Low reverse transfer capacitance ( C RSS = typical 23pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain TO-247 Lead-free: 18N60L Halogen-free : 18N60G ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing 18N60-T47-T 18N60L-T47-T 18N60G-T47-T TO-247 G D S Tube
18N60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 1 . A a ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D 18 A Pulsed Drain Current I DM 45 A Avalanche Current I AR 18 A Single Pulsed E AS 1000 Avalanche Energy Repetitive E AR 30 mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation P D 360 W Junction Temperature T J 150 ° С Storage Temperature T STG -55 ~ +150 ° С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Case θJC 0.35 ℃/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 600 V Zero Gate Voltage Drain Current I DSS V DS=VDSS, VGS=0V 25 µA Gate-Body Leakage Current I GSS V DS=0V, VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS=10V, ID=0.5ID25 (Note 1) 400 m Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2500 pF Output Capacitance C OSS 280 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1MHz 23 pF SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) 21 ns Turn-ON Rise Time t R 22 ns Turn-OFF Delay Time t D(OFF) 62 ns Turn-OFF Fall-Time t F VGS=10V, VDS=0.5VDSS, ID=ID25, RG=5Ω (External) 22 ns Total Gate Charge Q G 50 nC Gate Source Charge Q GS 15 nC Gate Drain Charge Q GD VGS=10V, VDS=0.5VDSS, ID=0.5ID25 18 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I F=IS ,VGS=0V (Note 1) 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS V GS=0V 18 A Maximum Pulsed Drain-Source Diode Forward Current ISM Repetitive 54 A Reverse Recovery Time t RR 200 ns Reverse Recovery Charge Q RR VGS=0V, di/dt=100A/s, IS=18A, VR=100V 0.8 µC Note 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
18N60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 1 . A a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.