18N50T

FDP18N50 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 18A, 500V, R DS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• L o w C rss ( typical 25 pF)
• F a s t s w i t c h i n g
• 100% avalanche tested
• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics TO-220 FDP SeriesG SD TO-220F FDPF SeriesG SD D G S Symbol Parameter FDP18N50 FDPF18N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (T C = 25°C) - Continuous (TC = 100°C) 108 8 * 108 A A IDM Drain Current - Pulsed (Note 1) 72 72 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 945 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (T C = 25°C) - Derate above 25°C 235 1.88 0.47 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FDP 18N50 FDPF18N50 Unit RθJC Thermal Resistance, Junction-to-Case 0.53 2.15 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W * Drain current limited by maximum junction temperature

2 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A FDP18N50 / FDPF18N50 500V N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP18N50 FDP18N50 TO-220 - - 50 FDPF18N50 FDPF18N50 TO-220F - - 50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0V, ID = 250µA 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C- - 0 . 5 - - V / °C IDSS Zero Gate Voltage Drain Current V DS = 500V, VGS = 0V VDS = 400V, TC = 125°C µA µA IGSSF Gate-Body Leakage Current, Forward V GS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30V, VDS = 0V -- -- -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250µA3 . 0 - - 5 . 0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 9A -- 0.220 0.265 Ω gFS Forward Transconductance V DS = 40V, ID = 9A (Note 4) -- 25 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25V, VGS = 0V, f = 1.0MHz -- 2200 2860 pF Coss Output Capacitance -- 330 430 pF Crss Reverse Transfer Capacitance -- 25 40 pF Switching Characteristics td(on) Turn-On Delay Time V DD = 250V, ID = 18A RG = 25Ω (Note 4, 5) -- 55 120 ns tr Turn-On Rise Time -- 165 340 ns td(off) Turn-Off Delay Time -- 95 200 ns tf Turn-Off Fall Time -- 90 190 ns Qg Total Gate Charge V DS = 400V, ID = 18A VGS = 10V (Note 4, 5) -- 45 60 nC Qgs Gate-Source Charge -- 12.5 -- nC Qgd Gate-Drain Charge -- 19 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage V GS = 0V, IS = 18A -- -- 1.4 V trr Reverse Recovery Time V GS = 0V, IS = 18A dIF/dt =100A/µs (Note 4) -- 500 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µC

6 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A FDP18N50 / FDPF18N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

7 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A FDP18N50 / FDPF18N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms

8 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A FDP18N50 / FDPF18N50 500V N-Channel MOSFET Mechanical Dimensions 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220

9 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A FDP18N50 / FDPF18N50 500V N-Channel MOSFET Mechanical Dimensions (7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F

10 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A FDP18N50 / FDPF18N50 500V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HE REIN; NEITHER DOES IT CONVEY ANY LICE NSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIO NS DO NOT EXPAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FAST FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET VCX™ Wire™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datas heet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet c ontains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20