18N50L-TF3-T

Microsoft Word - 18N50-L

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UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-477.L 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies.  FEATURES * RDS(ON) < 0.32Ω @ VGS=10V, ID=9A * High switching speed * 100% avalanche tested * Improved dv/dt capability  SYMBOL TO-3P TO-220 TO-263 TO-220F2 TO-230 TO-220F1 TO-220F  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 18N50L-TA3-T 18N50G-TA3-T TO-220 G D S Tube 18N50L-TF3-T 18N50G-TF3-T TO-220F G D S Tube 18N50L-TF1-T 18N50G-TF1-T TO-220F1 G D S Tube 18N50L-TF2-T 18N50G-TF2-T TO-220F2 G D S Tube 18N50L-TC3-T 18N50G-TC3-T TO-230 G D S Tube 18N50L-T3P-T 18N50G-T3P-T TO-3P G D S Tube 18N50L-TQ2-T 18N50G-TQ2-T TO-263 G D S Tube 18N50L-TQ2-R 18N50G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R502-477.L  MARKING

UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R502-477.L  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 500 V Gate to Source Voltage V GSS ±30 V Drain Current Continuous I D 18 A Pulsed (Note 2) I DM 72 (Note 5) A Avalanche Energy Single Pulsed (Note 3) E AS 945 mJ Repetitive (Note 2) E AR 23.5 mJ Avalanche Current (Note 2) I AR 18 A Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F/TO-220F1 PD 38.5 W TO-220F2 40.5 TO-220/TO-263 TO-230 235 TO-3P 277 Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220F/TO-220F1 θJc 3.3 °C/W TO-220F2 3.0 TO-220/TO-263 TO-230 0.53 TO-3P 0.45

UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R502-477.L  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 500 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C 0.5 V/°C Drain-Source Leakage Current I DSS VDS=500V, VGS=0V 1 µA VDS=400V, TC=125°C 10 µA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nAReverse V GS = -30 V, VDS = 0 V -100 ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=9A 0.32 Ω Forward Transconductance g FS V DS=40V, ID=9A (Note 1) 25 S DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V,VGS=0V,f=1.0MHz 1200 2860 pF Output Capacitance C OSS 270 430 pF Reverse Transfer Capacitance C RSS 35 40 pF SWITCHING PARAMETERS Total Gate Charge Q G VDS=50V, VGS=10V, ID=1.3A (Note 1,2) 70 85 nC Gate-Source Charge Q GS 15 nC Gate-Drain Charge Q GD 19 nC Turn-ON Delay Time t D(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1,2) 110 130 ns Turn-ON Rise Time t R 165 340 ns Turn-OFF Delay Time t D(OFF) 520 620 ns Turn-OFF Fall Time t F 180 290 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 18 A Maximum Body-Diode Pulsed Current I SM 72 A Drain-Source Diode Forward Voltage V SD I S =18A, VGS=0V 1.4 V Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R502-477.L  TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current

UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R502-477.L  TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 10V tP RG DUT L VDS ID VDD tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R502-477.L  TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.