18N40 UTC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-389.A 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect R DS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. FEATURES * RDS(ON) ≤ 408mΩ @VGS = 10 V * Ultra Low Gate Charge: 50nC (TYP.) * Low Reverse Transfer ( C RSS = typical 23pF ) * Fast Switching Speed * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen-Free 1 2 3 18N40L-T47-T 18N40G-T47-T TO-247 G D S Tube
UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 5 0 2 - 3 8 9 . A ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 400 V Gate-Source Voltage V GSS ±30 V Continuous I D 18 A Drain Current Pulsed I DM 45 A Avalanche Current I AR 18 A Single Pulsed E AS 1000 mJ Avalanche Energy Repetitive E AR 30 mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation P D 360 W Junction Temperature T J 150 ° С Storage Temperature T STG -55 ~ +150 ° С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 0.35 ° С/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 400 V Drain-Source Leakage Current I DSS V DS=400V, VGS=0V 25 µA Gate-Body Leakage Current I GSS V DS=0V, VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS=10V, ID=9A (Note) 200 m Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2500 pF Output Capacitance C OSS 280 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1MHz 23 pF SWITCHING PARAMETERS Total Gate Charge Q G 50 nC Gate Source Charge Q GS 15 nC Gate Drain Charge Q GD VGS=10V, VDS=0.5VDSS, ID=18A, RG=5Ω (External) 18 nC Turn-ON Delay Time t D(ON) 21 ns Turn-ON Rise Time t R 22 ns Turn-OFF Delay Time t D(OFF) 62 ns Turn-OFF Fall-Time t F VGS=10V, VDS=0.5VDSS, ID=9A 22 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I F=IS ,VGS=0V (Note) 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS V GS=0V 18 A Maximum Pulsed Drain-Source Diode Forward Current ISM Repetitive 54 A Reverse Recovery Time t RR 200 ns Reverse Recovery Charge Q RR VGS=0V, dIF/dt=100A/µs, IS=18A, VR=100V 0.8 µC Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 5 0 2 - 3 8 9 . A TYPICAL CHARACTERISTICS 2000 Drain Current vs. Source to Drain Voltage Drain Current,ID (A) Source to Drain Voltage,VSD (mV) 800400 600 1.5 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 1.00.5 2.0 1000 Drain Current vs. Gate Threshold Voltage Drain Current,ID (µA) Gate Threshold Voltage,VTH (V) 250 100 150 200 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current,ID (µA) Drain-Source Breakdown Voltage,BVDSS(V) 300 250 100 100 150 200 300 200 4002 43 500 VGS=10V, ID=9.0A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.