18N25G-TQ2-R

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UNISONIC TECHNOLOGIES CO., LTD 18N25 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-786.B 18A, 250V N -CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N 25 is an N -channel enhancement mode p ower MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanc he and commutation mode. It can provide minimum on- state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies.  FEATURES * RDS(ON)=0.16Ω @ VGS=10V * High switching speed  SYMBOL 1.Gate 3.Source 2.Drain TO-220F TO-263  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 18N25L-TF3-T 18N25G-TF3-T TO-220F G D S Tube 18N25L-TQ2-T 18N25G-TQ2-T TO-263 G D S Tube 18N25L-TQ2-R 18N25G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube, R: Tape Reel (2) TF3: TO-220F, TQ2: TO-263 (3) L: Lead Free, G: Halogen Free 18N25L-TA3-T (1) Packing Type (2) Package Type (3) Lead Free

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R502-786.B  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS ±20 V Drain Current Continuous ID 18 A Pulsed (Note 2) IDM 72 A Avalanche Energy Single Pulsed (Note 3) EAS 945 mJ Avalanche Current (Note 2) IAR 18 A Power Dissipation TO-220F PD 40 W TO-263 138 °C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. Starting TJ=25°C , L=5.2mH, IAS=18A, VDD=50V, RG=25Ω. 4. Drain current limited by maximum junction temperature.  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220F θJc 3.1 °C/W TO-263 0.9 °C/W  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 250 V Drain-Source Leakage Current IDSS VDS=250V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS =20V, VDS = 0V 100 nA Reverse VGS = -20V, VDS = 0V -100 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=18A 0.16 0.24 Ω DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 2200 2860 pF Output Capacitance COSS 330 430 pF Reverse Transfer Capacitance CRSS 25 40 pF SWITCHING PARAMETERS Total Gate Charge QG VDS=125V, VGS=10V, ID=18A (Note 1,2) 30 45 nC Gate-Source Charge QGS 10 nC Gate-Drain Charge QGD 10 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=18A, RG=25Ω (Note 1,2) 15 25 ns Turn-ON Rise Time tR 130 195 ns Turn-OFF Delay Time tD(OFF) 30 45 ns Turn-OFF Fall Time tF 100 150 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 18 A Maximum Body-Diode Pulsed Current ISM 72 A Drain-Source Diode Forward Voltage VSD IS =18A, VGS=0V 1.4 V Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R502-786.B  TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw QW-R502-786.B  TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG VGS VGS 200nF Same Type as DUT 3mA Test Circuit Waveforms Resistive Switching VGS DUT RG VDS RD VDS VGS 90% 10% td(ON) tR tFtd(OFF) 10V tON tOFF VDD Test Circuit Waveforms Unclamped Inductive Switching 10V tP RG DUT L VDS ID VDD tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R502-786.B  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.60 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 100 150 200 250 300 0 60 180 240 300120 100 150 200 250 300 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 0 0.5 1 1.5 2.5 0 Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Drain Current, ID (A) 1.0 VGS=10V, ID=14A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.