SD1898 STMICROELECTRONICS | Alldatasheet
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Technical content
1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS .400 SQ. 2LFL (M186) epoxy sealed .1.65 GHz .28 VOLTS .EFFICIENCY 40% MIN. .CLASS C OPERATION .COMMON BASE .P OUT = 32 W MIN. WITH 9 dB GAIN
DESCRIPTION
The SD1898 is a 28 V Class C silicon NPN tran- sistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitter- ballasted die geometry is employed providing high gain and efficiency while ensuring long term re- liability and ruggedness under severe operating conditions. SD1898 is packaged in a cost-effective epoxy sealed housing. PIN CONNECTION BRANDING 1898 ORDER CODE SD1898 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 7.8 A PDISS Power Dissipation 87.5 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 2.0 °C/W SD1898 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA November 1992 1/4
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1.65 GHz P IN = 4.0 W V CE = 28 V 32 — — W G P f= 1.65 GHz P IN = 4.0 W V CE = 28 V 9.0 — — dB ηcf = 1.65 GHz P IN = 4.0 W V CE = 28 V 40 — — % STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 45 — — V BV CEO IC = 10mA I B = 0mA 12 — — V BV EBO IE = 10mA I C = 0mA 3.5 — — V hFE VCE = 5V I C = 2A 15 — 150 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT EFFICIENCY vs POWER INPUT SD1898
C1, C2 : .4 - 2.5pF Johanson Capacitor C3 : 15,000pF EMI Filter C4 : 1000pF Chip Capacitor L1, L2 : 5 Turns Choke Diameter Wire .025” I.D. .125” Substrate: Er = 10.2, Height .050”, 1 Oz. Copper All Dimensions in Inches. TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) 1550 MHz 6.6 + j 15.0 5.6 − j2 . 5 1600 MHz 8.3 + j 14.5 4.7 − j1 . 9 1650 MHz 12.0 + j 12.0 4.1 − j1 . 4 SD1898
Ref.: Dwg. No.12-0186 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD1898