SD1893-03 STMICROELECTRONICS | Alldatasheet

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Technical content

1.6 GHZ SATCOM APPLICATIONS

RF & MICROWAVE TRANSISTORS .230 2LFL (M151) hermetically sealed .1.65 GHz .28 VOLTS .OVERLAY DIE GEOMETRY .GOLD METALLIZATION .HIGH RELIABILITY AND RUGGEDNESS .P OUT = 10 W MIN. WITH 11.0 dB GAIN .COMMON BASE

DESCRIPTION

The SD1893-03 is a 28 V silicon NPN planar tran- sistor designed for INMARSAT and other 1.6 GHz SATCOM applications. The device utilizes poly- silicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. PIN CONNECTION BRANDING 1893-3 ORDER CODE SD1893-03 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 4.4 A PDISS Power Dissipation 43 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance 5.5 °C/W SD1893-03 1. Collector 3. Base 2. Emitter THERMAL DATA November 1992 1/5

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1.65 GHz P IN = 0.6 W V CE = 28 V 10 — — W G P f= 1.65 GHz P IN = 0.6 W V CE = 28 V 11 — — dB ηcf = 1.65 GHz P IN = 0.6 W V CE = 28 V 45 — — % C OB f= 1 MHz V CB = 28 V — 19 — pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 3mA I E = 0mA 45 — — V BV EBO IE = 3mA I C = 0mA 3.5 — — V ICBO VCB = 28V I E = 0mA — — 5 mA hFE VCE = 5V I C = 300mA 15 — 150 — DYNAMIC SD1893-03

FREQ. Z IN (Ω )Z CL (Ω ) SD1893-03

C1, C2 : .4 - 2.5pF Johanson Capacitor #27283 C3 : 100pF Chip Capacitor ATC 100 A101KCA 150 C4 : 15,000pF EMI Filter Murata/Erie 9900-381-6004 L1, L2 : 4 Turn, Choke #28 AWG .080” I.D. Board Material: Epsilam 10, Er = 10.2, H= .050” 1 Oz. Cu. SMA Launcher CDI (2 poeces) .230” Fixture Housing Heatsink, Advanced Corp. 5308-2CC SD1893-03

Ref.: Dwg. No.12-0151 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD1893-03