SD1891-03 STMICROELECTRONICS | Alldatasheet
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Technical content
1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS .230 2LFL (M151) hermetically sealed .1.65 GHz .28 VOLTS .GOLD METALLIZED SYSTEM .POLYSILICON SITE BALLASTING .OVERLAY DIE GEOMETRY .HIGH RELIABILITY AND RUGGEDNESS .P OUT = 5.0 W MIN. WITH 14.0 dB GAIN
DESCRIPTION
The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SAT- COM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. PIN CONNECTION BRANDING 1891-03 ORDER CODE SD1891-03 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 1.1 A PDISS Power Dissipation 8.8 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance 20.0 °C/W SD1891-03 1. Collector 3. Base 2. Emitter THERMAL DATA March 1993 1/5
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1.65 GHz P IN = 200 mW V CE = 28 V 5.0 — — W G P f= 1.65 GHz P IN = 200 mW V CE = 28 V 14 — — dB ηcf = 1.65 GHz P IN = 200 mW V CE = 28 V 45 — — % C OB f= 1 MHz V CB = 28 V — 2.5 — pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 45 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V ICBO VCB = 24V I E = 0mA — — 0.5 mA hFE VCE = 5V I C = 100mA 15 — 150 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT SD1891-03
1.5 GHz
1.7 GHz
FREQ. Z IN (Ω )Z CL (Ω ) SD1891-03
C1, C2 : .4 - 2.5pF Johandson Capacitor #27283 C3 : 100pF ATC Chip Capacitor ATC100 A101KCA 150 C4 : 15,000pF EMI Filter Murata/Erie 9900-381-6004 L1, L2 : 4 Turns, Choke #28 AWG .080” I.D. S1 : Epsilam 10 Er = 10.2, Height .050” 1 Oz. Cu. SMA Launcher CD1 (2 pieces) .230” Fixture Housing Heatsink SD1891-03
Ref.: Dwg. No.12-0151 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD1891-03