181RKI IRF | Alldatasheet
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DISCRETE POWER DIODES and THYRISTORS DATA BOOK
PHASE CONTROL THYRISTORS Stud Version 181RKI SERIES Bulletin I25153/B
Features
dv/dt = 1000V/µs option International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 180 A @ T C 80 °C IT(RMS) 285 A ITSM @ 50Hz 3800 A @ 60Hz 4000 A I2t @ 50Hz 72 KA 2s @ 60Hz 66 KA 2s V DRM /VRRM 400 to 1000 V tq typical 100 µs TJ - 40 to 125 °C Parameters 181RKI Units Major Ratings and Characteristics case style TO-209AB (TO-93)
Voltage V DRM /VRRM , max. repetitive VRSM , maximum non- IDRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max. V V mA 40 400 500 181RKI 80 800 900 30 100 1000 1100 ELECTRICAL SPECIFICATIONS Voltage Ratings IT(AV) Max. average on-state current 180 A 180° conduction, half sine wave @ Case temperature 80 °C IT(RMS) Max. RMS on-state current 285 DC @ 79°C case temperature ITSM Max. peak, one-cycle 3800 t = 10ms No voltage non-repetitive surge current 4000 A t = 8.3ms reapplied 3500 t = 10ms 100% V RRM 3660 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 72 t = 10ms No voltage Initial TJ = TJ max. 66 t = 8.3ms reapplied 61 t = 10ms 100% V RRM 56 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 720 KA 2√s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance V TM Max. on-state voltage 1.35 V Ipk= 570A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.83 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.92 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.81 (I > π x IT(AV)),TJ = TJ max. Parameter 181RKI Units Conditions 0.89 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA 2s V m Ω mA TJ = 25°C, anode supply 12V resistive load di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω , tr ≤1µs of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM , TJ = 25°C ITM = 50A, TJ = TJ max, di/dt = 10A/µs, VR = 100V dv/dt = 20V/µs Parameter 181RKI Units Conditions td Typical delay time 1.0 Switching tq Typical turn-off time 100 µs
300 A/µs
Fig. 4 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge CurrentFig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics Fig. 9 - Gate Characteristics
dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/µs TJ = TJ max. linear to 80% rated VDRM Parameter 181RKI Units Conditions 30 mA TJ = TJ max, rated V DRM /VRRM applied PGM Maximum peak gate power 10 TJ = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required TJ = - 40°C to trigger mA TJ = 25°C TJ = 125°C VG T DC gate voltage required TJ = - 40°C to trigger V TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter 181RKI Units Conditions 5.0 Triggering VGD DC gate voltage not to trigger 0.25 V TJ = TJ max. TYP. MAX. 130 - 65 150 35 - 2.0 - 1.2 2.5 0.9 - Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W V TJ = TJ max., tp ≤ 5ms TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case R thCS Ma x. thermal resistance, case to heatsink T Mounting torque, ± 10% 31 (275) 24.5 (210) wt Approximate weight 280 g Case style TO - 209AB (TO-93) See Outline Table Parameter 181RKI Units Conditions
0.15 DC operation
0.04 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification K/W Nm (lbf-in) Lubricated threads Non lubricated threads
180° 0.050 0.032 TJ = TJ max. 120° 0.063 0.059 90° 0.080 0.082 K/W 60° 0.118 0.124 30° 0.225 0.228 Conduction angleSinusoidal conductionRectangular conductionUnits Conditions ΔR thJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Ordering Information Table 18 1 RKI 100 2 3 5 61 Device Code 1 - IT(AV) rated average output current (rounded/10) 2 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 3 - Thyristor 4 - Voltage code: Code x 10 = V RRM (See Voltage Rating Table) 5 - None = Stud base UNF 3/4 - 16UNF threads 6 - Critical dv/dt:None = 500V/µsec S90 = 1000V/µsec Outline Table Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) 18 (0.71) 11 (0.43) DIA. 6.5 (0.26) 1 3 (0.5 1 ) GLASS-METAL SEAL M A X . 2 1(0.8 3) M A X . 2 8.5 (1.12 ) 3 (0.12) 7 0 (2.75 ) M A X . DIA. 28 (1.1) MAX. 16 (0 .6 3) M A X . FLAG TERMINAL 1.5 (0.06) DIA. SW 32 3/4"-16UNF-2A
Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics WHITE GATE RED SHRINK RED CATHODE RED SILICON RUBBER C.S. 0.4mm (0.0006 s.i.) M A X . 82 (3 .23) M IN . 4.3 (0.17) DIA. 19 (0.75) MAX. 2 8.5 (1.12) M A X . 16 (0.63) M A X . 8.5 (0.33) DIA. GLASS METAL SEAL 28.5 (1.12) MAX. DIA. SW 32 C.S. 25mm 2 (0.039 s.i.) FLEXIBLE LEAD 4 (0.16) MAX. 22 (0.86) MIN. 35 (1.38) MAX. 3/4"-16UNF-2A 21 (0.8 3) WHITE SHRINK 9.5 (0.37) MIN. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) AMP. 280000-1 REF-250