180RKI40PBF VISHAY | Alldatasheet

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Document Number: 94382 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products

FEATURES

  • Hermetic glass-metal seal  International standard case TO-209AB ( TO-93) R o H S c o m p l a i n t  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 180 A TO-209AB (TO-93) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 180 A TC 80 °C IT(RMS) 285 A ITSM

50 Hz 3800

60 Hz 4000

50 Hz 72

60 Hz 66

tq Typical 100 µs TJ - 40 to 125 °C VOLTAGE RATINGS PART NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 180/181RKI 40 400 500 3080 800 900 100 1000 1100

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 180 A 80 °C Maximum RMS on-state current I RMS DC at 79 °C case temperature 285 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, intial TJ = TJ maximum 3800 t = 8.3 ms 4000 t = 10 ms 100 % V RRM reapplied 3500 t = 8.3 ms 3660 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied kA2s t = 8.3 ms 66 t = 10 ms 100 % VRRM reapplied t = 8.3 ms 56 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 720 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83 V High level value of threshold voltage V T(TO)2 (I > π × IT(AV)), TJ = TJ maximum 0.89 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.92 mΩ High level value of on-state slope resistance r t2 (I > π IT(AV)), TJ = TJ maximum 0.81 Maximum on-state voltage V TM Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

300 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V dV/dt = 20 V/µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum rated VDRM/VRRM applied 30 mA

Document Number: 94382 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units

12 V anode to cathode applied

mATJ = 25 °C 65 150 TJ = 125 °C 35 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.0 - VTJ = 25 °C 1.2 2.5 TJ = 125 °C 0.9 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range TJ - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.15 K/W Maximum thermal resistance, junction to ambient RthCS Mounting surface, smooth, flat and greased 0.04 Mounting force, ± 10 % Non-lubricated threads 31 (275) Nm (lbf · in) Lubricated threads 24.5 (210) Approximate weight 280 g Case style See dimensions - link at the end of datasheet TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION REC TANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.050 0.032 TJ = TJ maximum K/W 120° 0.063 0.059 90° 0.080 0.082 60° 0.118 0.124 30° 0.225 0.228

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Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle 181RKI Series RthJC (DC) = 0.15 K/W 100 110 120 130 0 50 100 150 200 250 300 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod 181RKI Series R (DC) = 0.15 K/ WthJC 0 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R 0.1K/W -Delta R thSA 0.2K/W 0.3K/W 0.6K/W 0.8K/W

1 K/W

1.5K/W

2 K/W

0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average On-s tate P ower Los s (W) Average On-s tate Current (A) 181RKI S eries T = 1 2 5 ° C J 0 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R =0.1K/W- DeltaR thSA 0.2K/W 0.3K/W 0.6K/W 0.8K/W

1.5 K/W

2 K/ W

180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average On-s tate Power Loss (W Average On-s tate Current (A) 181RKI S eries T = 1 2 5 ° C J

Document Number: 94382 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Thermal impedance ZthJC Characteristics 1500 2000 2500 3000 3500 4000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Pulses (N) Peak Half S ine Wave On-state Current (A) 181RKI S eries Initial T = 125°C a t 60 Hz 0.0083 s a t 50 Hz 0.0100 s J At Any Rated Load Condition And With R ated V Applied F ollowing S urge.RRM 1500 2000 2500 3000 3500 4000 0.01 0.1 1 Pulse Tra in Dura t io n ( s) Vers us P uls e T rain Duration. Control Peak Half S ine Wave On-state Current (A) Initial T = 125°C No Voltage R eapplied R ated V R eappliedRRM J 181RKI S eries Maximum Non R epetitive S urge Current Of Conduction May Not Be Maintained. 100 1000 10000 0.5 1 1.5 2 2.5 3 T = 2 5 ° C J In st a n t a n e o us O n -st a t e C urre nt ( A ) Ins tantaneous On-s tate Voltage (V) T = 1 2 5 ° C J 181RKI S eries 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (s ) thJCT rans ient T hermal I mpedance Z (K /W) 181RKI S eries St e a d y St a t e V a l u e R = 0.15 K/ W (DC Operation) thJC

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 94382

6 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) (1) (3) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) R ectangular gate puls e a) R ecommended load line for b) R ecommended load line for F requency L imited by P G(AV) Tj= 25 °C Tj = - 4 0 ° C Tj = 1 40 ° C (2) (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300µs <=30% rat ed d i/ dt: 15V, 40ohms tr<=1 µs, tp=>6µs Devic e: 181R KI S eries rated di/ dt: 20V, 30ohms ; tr<=0.5 µs, tp=>6µs (4) -I T(AV) rated average output current (rounded/10) - 0 = Eyelet terminals (gate and auxiliary cathode leads) - Thyristor 1 = Fast-on terminals (gate and auxiliary cathode leads) - Voltage code x 10 = V RRM (see Voltage Ratings table) - Lead (Pb)-free Device code 513 24 18 1 RKI 100 PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95077

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.