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Technical content

Features

  • Ultra Low On-Resistance
  • Low Gate Charge
  • High Speed Switching
  • 100% Avalanche Test
  • Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage V DSS 100 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D 180 A Drain Current (DC) Limited by Package I DL 100 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 600 A Power Dissipation Tc=25°C PD 2.1 W 200 Junction Temperature Tj 175 °C Storage Temperature Tstg −55 to +175 °C Source Current (Body Diode) I S 100 A Avalanche Energy (Single Pulse) *1 EAS 451 mJ Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL 260 °C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R θJC 0.75 °C/W Junction to Ambient *2 R θJA 71.4 Note: *1 VDD=48V , L=100μH, IAV=70A (Fig.1) *2 Insertion mounted Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Electrical Connection N-Channel Marking 180N10 B LOT No. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1:G a t e 2:D r a i n 3:S o u r c e VDSS R DS(on) Max I D Max 100V 3.0mΩ@ 15V 180A 3.5mΩ@ 10V TO-220-3L1 2 3

www.onsemi.com Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V( BR)DSS I D=10mA, VGS=0V 100 V Zero-Gate Voltage Drain Current I DSS V DS=100V, VGS=0V 10 μA Gate to Source Leakage Current I GSS V GS=±20V, VDS=0V ±200 nA Gate Threshold Voltage V GS(th) V DS=10V, ID=1mA 2 4 V Forward Transconductance g FS V DS=10V, ID=50A 150 S Static Drain to Source On-State Resistance RDS(on)1 I D=50A, VGS=15V 2.5 3.0 m Ω RDS(on)2 I D=50A, VGS=10V 2.7 3.5 m Ω Input Capacitance Ciss VDS=50V, f=1MHz 6,950 pF Output Capacitance Coss 3,000 pF Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time td(on) See Fig.2 95 ns Rise Time tr 320 ns Turn-OFF Delay Time td(off) 185 ns Fall Time tf 130 ns Total Gate Charge Qg VDS=48V, VGS=10V, ID=100A 95 nC Gate to Source Charge Qgs 31 nC Gate to Drain “Miller” Charge Qgd 26 nC Forward Diode Voltage VSD I S=100A, VGS=0V 0.9 1.5 V Reverse Recovery Time trr See Fig.3 150 ns Reverse Recovery Charge Qrr I S=100A, VGS=0V, VDD=50V, di/dt=100A/μs 580 nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit VDD NDPL180N10B L Driver MOSFET G S D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per formance may not be indicated by the Electrical Characteristics if operated under different conditions.

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www.onsemi.com ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ting of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended tosupport or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject t oa l l applicable copyright laws and is not for resale in any manner. Package Dimensions NDPL180N10BG TO-220, 3-Lead / TO-220-3L CASE 221AU ISSUE O unit : mm 1: Gate 2: Drain 3: Source

ORDERING INFORMATION

Device Package Shipping Note NDPL180N10BG TO-220, 3-Lead TO-220-3L 50 pcs. / Tube Pb-Free Note on usage : Since the NDPL180N10B is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.