17431

HA17431 HITACHI | Alldatasheet

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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers

Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.

ADE-204-049A (Z) Rev.1 Sep. 2002

Description

The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can provide ±1% accuracy in the V versions, which have a V KA max of 16 volts. The HA17431VLP, which is provided in the MPAK-5 package, is designed for use in switching mode power supplies. It provides a built-in photocoupler bypass resistor for the PS pin, and an error amplifier can be easily constructed on the supply side.

Features

• The V versions provide 2.500 V ±1% at Ta = 25°C
• The HA17431VLP includes a photocoupler bypass resistor (2 kΩ)
• The reference voltage has a low temperature coefficient
• The MPAK-5(5-pin), MPAK(3-pin) and UPAK miniature packages are optimal for use on high mounting density circuit boards
• Car use is provided Block Diagram A REF K PS* 2kΩ 2.500V Note: * The PS pin is only provided by the HA17431VLP.

Rev.1, Sep. 2002, page 2 of 24 Application Circuit Example Vout A K REF 2kΩ PS HA17431VLP GND Switching power supply secondary-side error amplification circuit R

Ordering Information

Accuracy ±1% ±2.2% ±4% Max 2.525 V 2.550 V 2.595 V Typ 2.500 V 2.495 V 2.495 V Reference voltage (at 25°C) Min 2.475 V 2.440 V 2.395 V Cathode voltage 16 V max 40 V max 40 V max Cathode current 50 mA max 150 mA max 150 mA max HA17431VPJ HA17431PNAJ TO-92 HA17431PAJ HA17431PJ TO-92MOD HA17431FPAJ Car use HA17431FPJ FP-8D –40 to +85°C

Rev.1, Sep. 2002, page 3 of 24 Ordering Information (cont.) Version Item V Version A Version Normal Version Package Operating Temperature Range HA17431VLTP HA17432VLTP MPAK HA17431VLP MPAK-5 HA17431VP HA17431PNA TO-92 HA17431VUP HA17431UPA HA17432VUP HA17432UPA UPAK HA17431PA HA17431P TO-92MOD HA17431FPA Industrial use HA17431FP FP-8D HA17431UA Commercial use HA17432UA UPAK –20 to +85°C Pin Arrangement A A KREF UPAK (HA17431UA/UPA/VUP) 123 A 123 A REFK UPAK (HA17432UA/UPA/VUP) A KREF PSNC MPAK-5 123 KREF A MPAK (HA17431VLTP) REFK A MPAK (HA17432VLTP) 2 31 A KREF Mark side TO-92 2 31 A KREF Mark side TO-92MODFP-8D 1234 8765 REF NC A NC KN C N C NC

Rev.1, Sep. 2002, page 4 of 24 Absolute Maximum Ratings (Ta = 25°C) Item Symbol HA17431VLP HA17431VP HA17431VPJ Unit Notes Cathode voltage V KA 16 16 16 V 1 PS term. voltage V PS V KA to 16 — — V 1,2,3 Continuous cathode current IK –50 to +50 –50 to +50 –50 to +50 mA Reference input current Iref –0.05 to +10 –0.05 to +10 –0.05 to +10 mA Power dissipation P T 150 * 500 * 500 * mW 4, 5 Operating temperature range Topr –20 to +85 –20 to +85 –40 to +85 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C Item Symbol HA17431VUP/HA17432VUP HA17431VLTP/HA17432VLTP Unit Notes Cathode voltage V KA 16 16 V 1 PS term. voltage V PS — — V 1,2,3 Continuous cathode current IK –50 to +50 –50 to +50 mA Reference input current Iref –0.05 to +10 –0.05 to +10 mA Power dissipation P T 800 * 150 * mW 4, 8 Operating temperature range Topr –20 to +85 –20 to +85 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Item Symbol HA17431PNA HA17431P/PA HA17431FP/FPA HA17431UA/UPA/ HA17432UA/UPA Unit Notes Cathode voltage VKA 40 40 40 40 V 1 Continuous cathode current IK –100 to +150 –100 to +150 –100 to +150 –100 to +150 mA Reference input current Iref –0.05 to +10 –0.05 to +10 –0.05 to +10 –0.05 to +10 mA Power dissipation PT 500 * 800 * 500 * 800 * mW 5,6,7,8 Operating temperature range Topr –20 to +85 –20 to +85 –20 to +85 –20 to +85 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +125 –55 to +150 °C

Rev.1, Sep. 2002, page 5 of 24 Absolute Maximum Ratings (cont.) (Ta = 25°C) Item Symbol HA17431PNAJ HA17431PJ/PAJ HA17431FPJ/FPAJ Unit Notes Cathode voltage V KA 40 40 40 V 1 Continuous cathode current IK –100 to +150 –100 to +150 –100 to +150 mA Reference input current Iref –0.05 to +10 –0.05 to +10 –0.05 to +10 mA Power dissipation P T 500 * 800 * 500 * mW 5,6,7 Operating temperature range Topr –40 to +85 –40 to +85 –40 to +85 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +125 °C Notes: 1. Voltages are referenced to anode. 2. The PS pin is only provided by the HA17431VLP. 3. The PS pin voltage must not fall below the cathode voltage. If the PS pin is not used, the PS pin is recommended to be connected with the cathode. 4. Ta ≤ 25°C. If Ta > 25°C, derate by 1.2 mW/°C. 5. Ta ≤ 25°C. If Ta > 25°C, derate by 4.0 mW/°C. 6. Ta ≤ 25°C. If Ta > 25°C, derate by 6.4 mW/°C. 7. 50 mm × 50 mm × 1.5mmt glass epoxy board(5% wiring density), Ta ≤ 25°C. If Ta > 25°C, derate by 5 mW/°C. 8. 15 mm × 25 mm × 0.7mmt alumina ceramic board,Ta ≤ 25°C. If Ta > 25°C, derate by 6.4 mW/°C.

Rev.1, Sep. 2002, page 6 of 24

Electrical Characteristics

HA17431VLP/VP/VPJ/VUP/VLTP, HA17432VUP/VLTP (Ta = 25°C, IK = 10 mA) Item Symbol Min Typ Max Unit Test Conditions Notes Reference voltage Vref 2.475 2.500 2.525 V V KA = Vref Reference voltage temperature deviation Vref(dev) — 10 — mV V KA = Vref, Ta = –20°C to +85°C Reference voltage temperature coefficient ∆Vref/∆Ta — ±30 — ppm/ °C V KA = Vref, 0°C to 50°C gradient Reference voltage regulation ∆Vref/∆VKA — 2.0 3.7 mV/V V KA = Vref to 16 V Reference input current Iref — 2 6 µA R 1 = 10 kΩ, R2 = ∞ Reference current temperature deviation Iref(dev) — 0.5 — µA R 1 = 10 kΩ, R2 = ∞, Ta = –20°C to +85°C Minimum cathode current Imin — 0.4 1.0 mA V KA = Vref 2 Off state cathode current Ioff — 0.001 1.0 µA V KA = 16 V, Vref = 0 V Dynamic impedance ZKA — 0.2 0.5 Ω V KA = Vref, IK = 1 mA to 50 mA Bypass resistance R PS 1.6 2.0 2.4 k Ω IPS = 1 mA 3 Bypass resistance temperature coefficient PS/∆Ta — +2000 — ppm/ °C I PS = 1 mA, 0°C to 50°C gradient

Rev.1, Sep. 2002, page 7 of 24 Electrical Characteristics (cont.) HA17431PJ/PAJ/FPJ/FPAJ/P/PA/UA/UPA/FP/FPA/PNA/PNAJ, HA17432UA/UPA (Ta = 25°C, IK = 10 mA) Item Symbol Min Typ Max Unit Test Conditions Notes 2.440 2.495 2.550 A Reference voltage Vref 2.395 2.495 2.595 V V KA = Vref Normal — 11 (30) Ta = –20°C to +85°C 1, 4 Reference voltage temperature deviation Vref(dev) — 5 (17) mV V KA = Vref Ta = 0°C to +70°C 1, 4 — 1.4 3.7 V KA = Vref to 10 V Reference voltage regulation ∆Vref/∆VKA — 1 2.2 mV/V VKA = 10 V to 40 V Reference input current Iref — 3.8 6 µA R 1 = 10 kΩ, R2 = ∞ Reference current temperature deviation Iref(dev) — 0.5 (2.5) µA R 1 = 10 kΩ, R2 = ∞, Ta = 0°C to +70°C Minimum cathode current Imin — 0.4 1.0 mA V KA = Vref 2 Off state cathode current Ioff — 0.001 1.0 µA V KA = 40 V, Vref = 0 V Dynamic impedance ZKA — 0.2 0.5 Ω V KA = Vref, IK = 1 mA to 100 mA Notes: 1. Vref(dev) = Vref(max) – Vref(min) Vref(dev) Vref(min) Vref(max) Ta Min Ta Max 2. Imin is given by the cathode current at Vref = Vref (IK=10mA) – 15 mV. 3. R PS is only provided in HA17431VLP. 4. The maximum value is a design value (not measured).

Rev.1, Sep. 2002, page 8 of 24 MPAK-5(5-pin), MPAK(3-pin) and UPAK Marking Patterns The marking patterns shown below are used on MPAK-5, MPAK and UPAK products. Note that the product code and mark pattern are different. The pattern is laser-printed. (b) (2) (c) (4)(1) (a) HA17431VLP NC PS REF A K HA17431UA (3) (4) (1) (2) (5) REF AA K 4A REF A K HA17431UPA (3) (4) (1) (2) (5) A 4 B (b) (2) (c) (4)(1) (a) REF A K HA17431VLTP (b) (2) (c) (4)(1) (a) K A REF HA17432VLTP A HA17432UA (3) (4) (1) (2) (5) K A REF A K A REF HA17432UPA (3) (4) (1) (2) (5) 4F K A REF HA17432VUP (3) (4) (1) (2) (5) A HA17431VUP (3) (4) (1) (2) (5) REF A K A Band mark Band markBand markBand mark Band mark Band mark Notes: 1. Boxes (1) to (5) in the figures show the position of the letters or numerals, and are not actually marked on the package. 2. The letters (1) and (2) show the product specific mark pattern. Product (1) (2) HA17431VLP 4 P HA17431VUP 4 R HA17432VUP 4 S HA17431VLTP 3 A HA17432VLTP 3 B HA17431UA 4 A HA17431UPA 4 B HA17432UA 4 C HA17432UPA 4 F 3. The letter (3) shows the production year code (the last digit of the year) for UPAK products. 4. The bars (a), (b) and (c) show a production year code for MPAK-5 and MPAK products as shown below. After 2010 the code is repeated every 8 years. Year 2002 2003 2004 2005 2006 2007 2008 2009 (a) None None None Bar Bar Bar Bar None (b) None Bar Bar None None Bar Bar None (c) Bar None Bar None Bar None Bar None 5. The letter (4) shows the production month code (see table below). Marked code A B C D E F G H J K L M 6. The letter (5) shows manufacturing code. For UPAK products.

Rev.1, Sep. 2002, page 9 of 24 Characteristics Curves HA17431VLP/VP/VPJ/VUP/VLTP, HA17432VUP/VLTP 2.575 2.550 2.525 2.475 2.450 2.425–20 0 20 40 60 80 85 Ambient temperature Ta (˚C) Reference voltage Vref (V) REF Reference Voltage Temperature Characteristics 1.0 0.5 0012345 Cathode voltage VK (V) Cathode voltage V K (V) Cathode current IK (mA) Cathode current IK (mA) Cathode Current vs. Cathode Voltage Characteristics 1 Cathode Current vs. Cathode Voltage Characteristics 2 2.500 VK=Vref IK=10mA VK=Vref 1V/DIV K A IK V Vref –50–50 5 1V/DIV VK=Vref

Rev.1, Sep. 2002, page 10 of 24 100 0.1 0.01100 1k 10k 100k 1M Frequency f (Hz) Dynamic impedance ZKA (Ω) REF Dynamic Impedance vs. Frequency Characteristics 100 1k 100k 1M 10M Frequency f (Hz) Open loop voltage gain GVOL (dB) Open Loop Voltage Gain, Phase vs. Frequency Characteristics K A V VK REF K A IK=10mA io iO = 2 mAP-P ZKA= iO VK (Ω) Phase delay ∅ (degrees) –180 –360 10k 220ΩVo 15kΩ 8.2kΩ Vi 10µF– + G = 20log Vi Vo (dB) GVOL IK

Rev.1, Sep. 2002, page 11 of 24 HA17431PJ/PAJ/FPJ/FPAJ/P/PA/UA/UPA/FP/FPA/PNA/PNAJ, HA17432UA/UPA Oscillation Stability vs. Load Capacitance between Anode and Cathode Cathode current IK (mA) 150 100 Load capacitance CL (µF) Stable region Oscillation region CL VCC 1.5 Open loop voltage gain GVOL (dB) Open Loop Voltage Gain, Phase vs. Frequency Characteristics (1) (With no feedback capacitance) Frequency f (Hz) 10 100 1 k 10 k 100 k 180 Phase φ (degrees) 8.2 kΩ 15 kΩ 220 Ω GND Vout10 µF Vin φ GV IK = 10 mA Open loop voltage gain GVOL (dB) Frequency f (Hz) 10 100 1 k 10 k Open Loop Voltage Gain, Phase vs. Frequency Characteristics (2) (When a feedback capacitance (Cf) is provided) 360 180 270 Phase φ (degrees) 50 Ω GND 20 V Vout+ 2 k 2.4 kΩ 7.5 kΩ Vin 200 µF Cf Cf = 0.22 µF Cf = 0.022 µF φ Gυ Gυ IK = 5 mA

Rev.1, Sep. 2002, page 12 of 24 Reference voltage pin Input current Iref (µA) 0.5 1.0 1.5 2.0 2.5 Cathode voltage V K (V) 01 5 2 0 1052 5 4 0 3530 IK = 10 mA Reference Voltage Pin Input Current vs. Cathode Voltage Characteristics Input/Output voltage VI (V) Time t (µs) 04 5 6 231 P.G f = 100 kHz Pulse Response GND Vout 220 Ω50 Ω OUTPUT (Vout) INPUT (P.G) Reference voltage Vref (V) 2.44 2.45 2.46 2.47 2.48 VKA = Vref IK = 10 mA 2.49 2.50 Ambient temperature Ta (˚C) –2 00 2 04 06 08 0 8 5 Reference Voltage Temperature Characteristics

Rev.1, Sep. 2002, page 13 of 24 Cathode current IK (mA) Cathode voltage VK (V) –10–21 2 3 –100 –80 –60 –40 –20 100 120 150 Cathode Current vs. Cathode Voltage Characteristics (1) VK = Vref Ta = 25˚C Cathode current IK (mA) Cathode voltage VK (V) 1230 0.2 0.4 0.6 0.8 1.0 1.2 Cathode Current vs. Cathode Voltage Characteristics (2) VKA = Vref Ta = 25˚C Imin Cathode current when off state Ioff (nA) Ambient temperature Ta (˚C) –20 0 20 40 60 80 85 0.5 1.5 Cathode Current Temperature Characteristics when Off State VKA = 40 V Vref = 0 Reference voltage pin input current Iref (µA) Ambient temperature Ta (˚C) –20 0 20 40 60 80 85 0.5 1.5 2.5 R1 = 10 kΩ R2 = ∞ IK = 10 mA Reference Voltage Pin Input Current Temperature Characteristics

Rev.1, Sep. 2002, page 14 of 24 Application Examples As shown in the figure on the right, this IC operates as an inverting amplifier, with the REF pin as input pin. The open-loop voltage gain is given by the reciprocal of “reference voltage deviation by cathode voltage change” in the electrical specifications, and is approximately 50 to 60 dB. The REF pin has a high input impedance, with an input current Iref of 3.8 µA Typ (V version: Iref = 2 µA Typ). The output impedance of the output pin K (cathode) is defined as dynamic impedance Z KA, and ZKA is low (0.2 Ω) over a wide cathode current range. A (anode) is used at the minimum potential, such as ground. K VCC OUT VEE A REF VZ ≅ 2.5V Figure 1 Operation Diagram Application Hints No. Application Example Description

1 Reference voltage generation circuit

This is the simplest reference voltage circuit. The value of the resistance R is set so that cathode current IK ≥ 1 mA. Output is fixed at Vout ≅ 2.5 V. The external capacitor CL (CL ≥ 3.3 µF) is used to prevent oscillation in normal applications.

2 Variable output shunt regulator circuit

K R CL Vout GND Vin GND A REF Iref This is circuit 1 above with variable output provided. Vout ≅ 2.5 V ×Here, (R1 + R2) Since the reference input current Iref = 3.8 µA Typ (V version: Iref = 2 µA Typ) flows through R1, resistance values are chosen to allow the resultant voltage drop to be ignored.

Rev.1, Sep. 2002, page 15 of 24 Application Hints (cont.) No. Application Example Description

3 Single power supply inverting

K Vout GND Vin GND AREF VCC RL Rin This is an inverting type comparator with an input threshold voltage of approximately 2.5 V. Rin is the REF pin protection resistance, with a value of several kΩ to several tens of kΩ. R L is the load resistance, selected so that the cathode current IK • 1 mA when Vout is low. Condition Vin Less then 2.5 V

2.5 V or more

V CC (VOH) Approx. 2 V (VOL) IC OFF ON

4 AC amplifier circuit

K Vout Vin REF A VCC RL R3Cin Cf Gain G = (DC gain)R1 R2 // R3 Cutoff frequency fc = 1 2π Cf (R1 // R2 // R3) This is an AC amplifier with voltage gain G = –R1 / (R2//R3). The input is cut by capacitance Cin, so that the REF pin is driven by the AC input signal, centered on 2.5 VDC. R2 also functions as a resistance that determines the DC cathode potential when there is no input, but if the input level is low and there is no risk of Vout clipping to VCC, this can be omitted. To change the frequency characteristic, Cf should be connected as indicated by the dotted line.

5 Switching power supply error

(Note) Note: LED : Light emitting diode in photocoupler : Bypass resistor to feed IK(>Imin) when LED current vanishes : LED protection resistance This circuit performs control on the secondary side of a transformer, and is often used with a switching power supply that employs a photocoupler for offlining. The output voltage (between V+ and V–) is given by the following formula: Vout ≅ 2.5 V × (R1 + R2) In this circuit, the gain with respect to the Vout error is as follows: G = ×R2 (R1 + R2) HA17431 open loop gain × photocoupler total gain As stated earlier, the HA17431 open-loop gain is 50 to 60 dB.

Rev.1, Sep. 2002, page 16 of 24 Application Hints (cont.) No. Application Example Description

6 Constant voltage regulator circuit

Q Vout GNDGND This is a 3-pin regulator with a discrete configuration, in which the output voltage Vout = 2.5 V × (R2 + R3) R1 is a bias resistance for supplying the HA17431 cathode current and the output transistor Q base current.

7 Discharge type constant current circuit

Q Load 2.5 V IL This circuit supplies a constant current of IL ≅ [A] into the load. Caution is required2.5 V RS since the HA17431 cathode current is also superimposed on IL. The requirement in this circuit is that the cathode current must be greater than Imin = 1 mA. The IL setting therefore must be on the order of several mA or more.

8 Induction type constant current circuit

R Q Load 2.5 V IL RS In this circuit, the load is connected on the collector side of transistor Q in circuit 7 above. In this case, the load floats from GND, but the HA17431 cathode current is not superimposed on I L, so that IL can be kept small (1 mA or less is possible). The constant current value is the same as for circuit 7 above: IL ≅ [A]2.5 V RS

Rev.1, Sep. 2002, page 17 of 24 Design Guide for AC-DC SMPS (Switching Mode Power Supply) Use of Shunt Regulator in Transformer Secondary Side Control This example is applicable to both forward transformers and flyback transformers. A shunt regulator is used on the secondary side as an error amplifier, and feedback to the primary side is provided via a photocoupler. Transformer Photocoupler Light emitting diode Phototransistor Output C1 R5 REF GND A K VK IB IF HA17431 VF SBDPWM IC HA17384 HA17385 Vref (+) (–) Figure 2 Typical Shunt Regulator/Error Amplifier Determination of External Constants for the Shunt Regulator DC characteristic determination: In figure 2, R1 and R2 are protection resistor for the light emitting diode in the photocoupler, and R2 is a bypass resistor to feed IK minimum, and these are determined as shown below. The photocoupler specification should be obtained separately from the manufacturer. Using the parameters in figure 2, the following formulas are obtained: R1 = V0 – VF – VK IF + IB , R2 = VF IB VK is the HA17431 operating voltage, and is set at around 3 V, taking into account a margin for fluctuation. R2 is the current shunt resistance for the light emitting diode, in which a bias current I B of around 1/5 IF flows. Next, the output voltage can be determined by R3 and R4, and the following formula is obtained: V0 = R3 + R4 × Vref, Vref = 2.5 V Typ The absolute values of R3 and R4 are determined by the HA17431 reference input current Iref and the AC characteristics described in the next section. The Iref value is around 3.8 µA Typ. (V version: 2 µA Typ)

Rev.1, Sep. 2002, page 18 of 24 AC characteristic determination: This refers to the determination of the gain frequency characteristic of the shunt regulator as an error amplifier. Taking the configuration in figure 2, the error amplifier characteristic is as shown in figure 3. When R5 = 0 When R5 ≠ 0 f1 fAC f2 fOSC Frequency f (Hz) Gain G (dB) * fOSC : PWM switching frequency Figure 3 HA17431 Error Amplification Characteristic In Figure 3, the following formulas are obtained: Gain G1 = G0 ≈ 50 dB to 60 dB (determined by shunt regulator) G2 = R5 Corner frequencies f1 = 1/(2π C1 G0 R3) f2 = 1/(2π C1 R5) G0 is the shunt regulator open-loop gain; this is given by the reciprocal of the reference voltage fluctuation ∆Vref/∆VKA, and is approximately 50 dB.

Rev.1, Sep. 2002, page 19 of 24 Practical Example Consider the example of a photocoupler, with an internal light emitting diode V F = 1.05 V and IF = 2.5 mA, power supply output voltage V2 = 5 V, and bias resistance R2 current of approximately 1/5 IF at 0.5 mA. If the shunt regulator VK = 3 V, the following values are found. R1 = 5V – 1.05V – 3V 2.5mA + 0.5mA = 316(Ω) (330Ω from E24 series) R2 = 1.05V 0.5mA = 2.1(kΩ) (2.2kΩ from E24 series) Next, assume that R3 = R4 = 10 kΩ. This gives a 5 V output. If R5 = 3.3 kΩ and C1 = 0.022 µF, the following values are found. G2 = 3.3 kΩ / 10 kΩ = 0.33 times (–10 dB) f1 = 1 / (2 × π × 0.022 µF × 316 × 10 kΩ) = 2.3 (Hz)

Rev.1, Sep. 2002, page 20 of 24 Package Dimensions 0.16 0 – 0.1 + 0.10 – 0.060.4+ 0.10 – 0.05 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 2.8 + 0.2 – 0.6 0.651.5 ± 0.150.65 1.1+ 0.2 – 0.1 0.3 Hitachi Code JEDEC JEITA Mass (reference value) MPAK Conforms 0.011 g As of January, 2002 Unit: mm 0.16 0 – 0.1 0.95 0.6 5 – 0.4 2.9 ± 0.2 1.9 ± 0.2 1.6 2.8 + 0.2 – 0.3 + 0.2 – 0.1 + 0.1 – 0.05 0.95 0.6 + 0.1 – 0.05 1.1 0.3 + 0.2 – 0.1 Hitachi Code JEDEC JEITA Mass (reference value) MPAK-5 0.015 g As of January, 2002 Unit: mm

Rev.1, Sep. 2002, page 21 of 24 4.5 ± 0.1 1.8 Max 1.5 ± 0.1

0.44 Max

0.44 Max0.48 Max

0.53 Max

1.5 1.5 3.0 2.5 ± 0.1

4.25 Max

0.8 Min

φ 1 0.4 (1.5) (2.5)(0.4) (0.2) Hitachi Code JEDEC JEITA Mass (reference value) UPAK Conforms 0.050 g As of January, 2002 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) FP-8D Conforms 0.10 g *Dimension including the plating thickness Base material dimension 0.10 ± 0.10

2.03 Max

4.4 *0.22 ± 0.05 4.85

0.75 Max

0.40 ± 0.06 0.60+ 0.25 – 0.18 *0.42 ± 0.08 0.12 0.15 0˚ – 8˚ M 8 5 1 4 1.05

5.25 Max

1.27 0.20 ± 0.04 6.50+ 0.25 – 0.15 As of January, 2002 Unit: mm

Rev.1, Sep. 2002, page 22 of 24

0.60 Max

0.55 Max

5.0 ± 0.2 0.7

2.3 Max

12.7 Min 0.5 Max 1.27 2.54 Hitachi Code JEDEC JEITA Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g As of January, 2002 Unit: mm

Rev.1, Sep. 2002, page 23 of 24 8.0 ± 0.5 0.7 10.1 Min 0.5 Max 1.27 2.54 0.65 ± 0.1 (reference value) TO-92 Mod Conforms 0.35 g As of January, 2002 Unit: mm

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