16TTS16

16TTS08 IRF | Alldatasheet

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Bulletin I2115 rev. D 12/98 PHASE CONTROL SCR SAFEIR Series 16TTS.. VT < 1.4V @ 10A ITSM = 200A VRRM = 800 to 1600V www.irf.com Description/Features The 16TTS.. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reli- able operation up to 125° C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics TO-220AC Capacitive input filter TA = 55°C, TJ = 125°C, 13.5 17 A common heatsink of 1°C/W Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units IT(AV) Sinusoidal 10 A waveform IRMS 16 A VRRM / VDRM up to 1600 V ITSM 200 A VT @ 10 A, TJ = 25°C 1.4 V dv/dt 500 V/µs di/dt 150 A/µs T J range - 40 to 125 °C Characteristics 16TTS.. Units Also available in SMD-220 package (series 16TTS..S) Package Outline

16TTS.. SAFEIR Series Bulletin I2115 rev. D 12/98 www.irf.com VRRM , maximum V DRM , maximum I RRM /IDRM peak reverse voltage peak direct voltage 125°C VV m A 16TTS08 800 800 10 16TTS12 1200 1200 16TTS16 1600 1600 Part Number Voltage Ratings IT(AV) Max. Average On-state Current 10 A @ T C = 98° C, 180° conduction half sine wave IRMS Max. RMS On-state Current 16 ITSM Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated VRRM applied Surge Current 200 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 144 A 2s 10ms Sine pulse, rated VRRM applied 200 10ms Sine pulse, no voltage reapplied I2√t Max. I2√t for fusing 2000 A 2√s t = 0.1 to 10ms, no voltage reapplied VTM Max. On-state Voltage Drop 1.4 V @ 10A, T J = 25°C rt On-state slope resistance 24.0 m Ω TJ = 125°C VT(TO) Threshold Voltage 1.1 V IRM /IDM Max.Reverse and Direct 0.5 mA T J = 25 °C Leakage Current 10 T J = 125 °C IH Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A -- 100 mA 16TTS08, 16TTS12 100 150 16TTS16 IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dtMax. Rate of Rise of off-state Voltage 500V/µs di/dtMax. Rate of Rise of turned-on Current 150A/µs Absolute Maximum Ratings Parameters 16TTS.. Units Conditions VR = rated VRRM / VDRM

16TTS.. SAFEIR Series Bulletin I2115 rev. D 12/98 www.irf.com Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 90 mA Anode supply = 6V, resistive load, T J = - 65°C to trigger 60 Anode supply = 6V, resistive load, T J = 25°C

35 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. required DC Gate Voltage 3.0 V Anode supply = 6V, resistive load, T J = - 65°C to trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C

1.0 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to trigger 0.2 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 2.0 mA T J = 125°C, VDRM = rated value Parameters 16TTS.. Units Conditions Switching Parameters 16TTS.. Units Conditions tgt Typical turn-on time 0.9 µs T J = 25°C trr Typical reverse recovery time 4 T J = 125°C tq Typical turn-off time 110 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 R thJC Max. Thermal Resistance Junction 1.3 °C/W DC operation to Case R thJA Max. Thermal Resistance Junction 62 to Ambient R thCS Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220AC Thermal-Mechanical Specifications Parameters 16TTS.. Units Conditions Kg-cm (Ibf-in)

16TTS.. SAFEIR Series Bulletin I2115 rev. D 12/98 www.irf.com Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Rating Characteristics 100 105 110 115 120 125 02468 1 0 1 2 30° 60° 90° 120° 180° Conduction Angle Average On-state Current (A) Maximum Allowable Case Temperature (°C) 16TTS.. Series R (DC) = 1.3 °C/WthJC 100 105 110 115 120 125 02468 1 0 1 2 1 4 1 6 DC 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduction Period Average On-state Current (A) 16TT S.. Se ries R (DC) = 1.3 °C/WthJC 0123456789 1 0 1 1 RMS Limit 180° 120° 90° 60° 30° Conduction Angle Average On-state Current (A) Maximum Average On-state Power Loss (W) 16TTS.. Series T = 125°C J 0 2 4 6 8 10 12 14 16 18 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Average On-state Current (A) Maximum Average On-state Power Loss (W) 16TTS.. Series T = 125°C J 100 120 140 160 180 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V Applied Following Surge. Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s RRM J Peak Half Sine Wave On-state Current (A) 16TTS..Series 100 120 140 160 180 200 0.01 0.1 1 Pulse Train Duration (s) Maximum Non Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Versus Pulse Train Duration. Initial T = 125°C No Voltage Reapplied Rated V Reapplied J RRM 16TTS.. Series

16TTS.. SAFEIR Series Bulletin I2115 rev. D 12/98 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 9 - Gate Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) Rectangular gate pulse (4) (3) (2) (1) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) TJ = 25 °C TJ = 125 °C b)Recommended load line for VGD IGD Frequency Limited by PG(AV) a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms TJ = -10 °C 16TTS.. Series 100 1000 012345 T = 25°CJ T = 125°CJ Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) 16TTS.. Series 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) thJC Steady State Value (DC Operation) 16TTS.. Series Single Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Transient Thermal Impedance Z (°C/W)

16TTS.. SAFEIR Series Bulletin I2115 rev. D 12/98 www.irf.com Outline T able Dimensions in millimeters (and inches) 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.84 (0.10) 2.04 (0.080) MAX.

16 T T S 16

2 - Circuit Configuration: T = Single Thyristor T = TO-220AC 4 - Type of Silicon: S = Converter Grade 5 - Voltage code: Code x 100 = VRRM Ordering Information T able 08 = 800V 12 = 1200V 16 = 1600V (G) 3 (A) 1 (K)

16TTS.. SAFEIR Series Bulletin I2115 rev. D 12/98 www.irf.com EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY:Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.