STB16N90K5 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 20
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 D²PAK (TO-263) package information
- 4.2 D²PAK packing information
- 4.3 D²PAK type B packing information
Features
Order code VDS RDS(on) max. ID STB16N90K5 900 V 330 mΩ 15 A
- Industry’s lowest R DS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB16N90K5 Product summary Order code STB16N90K5 Marking 16N90K5 Package D²PAK Packing Tape and reel N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package STB16N90K5 Datasheet DS12802 - Rev 2 - August 2019 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data
- When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4. On/off state
- Defined by design, not subject to production test.
Table 5. Dynamic
- C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
- C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width limited by safe operating area
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. additional external componentry.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Normalized breakdown voltage vs temperature Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. STB16N90K5
Package information
4.1 D²PAK (TO-263) package information
Figure 19. D²PAK (TO-263) type A package outline
Table 9. D²PAK (TO-263) type A package mechanical data
Figure 20. D²PAK (TO-263) type B package outline
Table 10. D²PAK (TO-263) type B mechanical data
Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)
4.2 D²PAK packing information
Figure 22. D²PAK tape outline
Figure 23. D²PAK reel outline Table 11. D²PAK tape and reel mechanical data
4.3 D²PAK type B packing information
Figure 24. D²PAK type B tape outline Figure 25. D²PAK type B reel outline
Table 12. D²PAK type B reel mechanical data
Revision history
Table 13. Document revision history 23-Oct-2018 1 Initial release. Updated Section 2.1 Electrical characteristics (curves).