16F3627

TRF3703_07 TI | Alldatasheet

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APPLICATIONS

RF_OUT RGE□PACKAGE (TOP VIEW) VCC GND BBINBBIPGNDGND 24 23 22 21 20 19 GND LOP 4LON 5GND GND 7 8 9 BBQN 10 1 1 BBQPGND GND

18 VCC

17 GND

DESCRIPTION

0.4-GHz TO 4-GHz QUADRATURE MODULATOR Cellular Base Transceiver Station Transmit 75-dBc Single-Carrier WCDMA ACPR at Channel 11-dBm Channel Power CDMA: IS95, UMTS, CDMA2000, TD-SCDMA Very Low Noise Floor: 163 dBm/Hz TDMA: GSM, IS-136, EDGE/UWC-136 OPI3 of dBm Wireless Local Loop P1dB of dBm Wireless MAN Wideband Transceivers Unadjusted Carrier Feedthrough of dBm Unadjusted Side-Band Suppression of dBc Single Supply: 4.5 V 5.5 V Operation Silicon Germanium Technology TRF370333 With 3.3-V CM at Q Baseband Inputs TRF370315 With 1.5-V CM at Q Baseband Inputs The TRF3703 is a very low-noise direct quadrature modulator, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF3703 is ideal for high-performance direct RF modulation from 400 MHz up to GHz. The modulator is implemented as a double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50- Ω load without any need of external components. The TRF3703 comes in two types, TRF370333 and TRF370315. The TRF370333 and TRF370315 devices have different common-mode voltage ratings at the Q baseband inputs. The TRF370333 requires a 3.3-V common-mode voltage, and the TRF370315 requires a 1.5-V common-mode voltage. Please be aware that an important notice concerning availability, standard warranty, and use in critical sheet. PRODUCTION DATA information is current as of publication date. Copyright 2006 2007, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

www.ti.com VCC GND BBIN BBIP GND GND GND VCC18 GND17 RF_OUT16

14 GND

/c83 NC NC B0175-01 NC NC NC TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 Functional Block Diagram NOTE: NC No connection Submit Documentation Feedback

www.ti.com DEVICE INFORMATION ABSOLUTE MAXIMUM RATINGS (1) RECOMMENDED OPERATING CONDITIONS THERMAL CHARACTERISTICS TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. TERMINAL FUNCTIONS TERMINAL I/O NO. BBIN I In-phase input BBIP I In-phase input BBQN I In-quadrature input BBQP I In-quadrature input 8,11, GND 12, 14, 17, Ground 19, 20, LON I Local oscillator input LOP I Local oscillator input 13, NC No connect RF_OUT O RF output VCC 18, Power supply over operating free-air temperature range (unless otherwise noted) VALUE (2) UNIT Supply voltage range 0.3 V to V Digital I/O voltage range 0.3 V to V I 0.3 V T J Operating virtual junction temperature range to 150 C T A Operating ambient temperature range to C T stg Storage temperature range to 150 C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT V CC Power-supply voltage 4.5 5.5 V PARAMETER TEST CONDITIONS VALUE UNIT R θ JA Thermal resistance, junction-to-ambient High-K board, still air 64.33 C/W R θ JC Thermal resistance, junction-to-case 49.3 C/W Submit Documentation Feedback

www.ti.com ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC Parameters Total supply current (1.5 V CM) T A C 195 205 I CC mA Total supply current (3.3 V CM) T A C 210 235 LO Input (50- Ω Single-Ended) LO frequency range 0.4 GHz f LO LO input power dBm LO port return loss dB Baseband Inputs TRF370333 3.3 V CM I and Q input dc common voltage V TRF370315 1.5 BW 1-dB input frequency bandwidth 350 MHz Input impedance, resistance k Ω TRF370333 Input impedance, parallel pF capacitance Z I(single ended) Input impedance, resistance k Ω TRF370315 Input impedance, parallel pF capacitance over recommended operating conditions, power supply T A f LO 400 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 2.3 dB P1dB Output compression point 9.4 dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc Submit Documentation Feedback

www.ti.com ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 over recommended operating conditions, power supply T A f LO 900 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 4.1 dB P1dB Output compression point dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc Output return loss dB DC only to BB inputs, MHz offset from f LO 160.4 Output noise floor 1.8-MHz offset from f LO CW tone; P out dBm 156.6 dBm/Hz 6-MHz offset from f LO CW tone; P out dBm 158.5 EDGE signal, P out dBm 0.59% EDGE signal, P out dBm 0.63% EVM Error vector magnitude (rms) EDGE signal, P out dBm, 2nd harmonic of LO dBm, 3rd harmonic of LO dBm (1) (1) The second- and third-harmonic tests were made independently at each frequency. over recommended operating conditions, power supply T A f LO 1800 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 4.4 dB P1dB Output compression point 9.5 dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc Output return loss dB DC only to BB inputs, MHz offset from f LO 162.6 Output noise floor 1.8-MHz offset from f LO CW tone; P out dBm 160 dBm/Hz 6-MHz offset from f LO CW tone; P out dBm 159.4 EDGE signal, P out dBm 0.66% EDGE signal, P out dBm 0.74% EVM Error vector magnitude (rms) EDGE signal, P out dBm, 2nd harmonic of LO 15.5 dBm, 3rd harmonic of LO dBm (1) (1) The second- and third-harmonic tests were made independently at each frequency. Submit Documentation Feedback

www.ti.com ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 over recommended operating conditions, power supply T A f LO 2140 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 4.5 dB P1dB Output compression point 9.5 dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc Output return loss 8.5 dB 20-MHz offset from f LO dc only to BB inputs 163 Output noise floor dBm/Hz 20-MHz offset from f LO WCDMA signal; 162 P in 20.5 dBVrms and Q input) WCDMA signal; P out dBm 75.8 Adjacent-channel power ACPR WCDMA signal; P out dBm dBc ratio WCDMA signals; P out dBm per carrier WCDMA signal; P out dBm Alternate-channel power WCDMA signal; P out dBm 80.5 dBc ratio WCDMA signals; P out dBm per carrier over recommended operating conditions, power supply T A f LO 2500 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 4.4 dB P1dB Output compression point 9.5 dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc over recommended operating conditions, power supply T A f LO 3600 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 3.5 dB P1dB Output compression point 9.5 dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc Submit Documentation Feedback

www.ti.com ELECTRICAL CHARACTERISTICS TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 over recommended operating conditions, power supply T A f LO 4000 MHz at dBm (unless otherwise noted) RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT G Voltage gain Output rms voltage over input I (or rms voltage 4.5 dB P1dB Output compression point dBm IP3 Output IP3 dBm IP2 Output IP2 Measured at f LO f BB dBm Carrier feedthrough Unadjusted dBm Sideband suppression Unadjusted dBc Submit Documentation Feedback

www.ti.com TYPICAL CHARACTERISTICS −20 −15 −10 VBB − Baseband Voltage Single-Ended RMS − V POUT − Output Power at 1.8 GHz − dBm 0.01 0.1 1 G023 f − Frequency − MHz −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 POUT − Output Power − dBm G010 –40°C 25°C 85°C LO = 0 dB VCC = 5 V f − Frequency − MHz −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 POUT − Output Power − dBm G011 LO = 0 dB TA = 25°C 4.5 V 5.5 V 5 V f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 POUT − Output Power − dBm G012 VCC = 5 V TA = 25°C –5 dBm 5 dBm 0 dBm TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 P OUT P OUT vs vs BASEBAND VOLTAGE FREQUENCY AND TEMPERATURE Figure Figure P OUT P OUT vs vs FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND LO POWER Figure Figure Submit Documentation Feedback

www.ti.com f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 P1dB − dBm G001 –40°C25°C LO = 0 dB VCC = 5 V 85°C f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 P1dB − dBm G002 4.5 V LO = 0 dB TA = 25°C 5.5 V 5 V 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G014 LO = 0 dBm VCC = 5 V –40°C 25°C 85°C f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 P1dB − dBm G003 –5 dBm VCC = 5 V TA = 25°C 0 dBm 5 dBm TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 TYPICAL CHARACTERISTICS (continued) P1dB P1dB vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE Figure Figure P1dB OIP3 vs vs FREQUENCY AND LO POWER FREQUENCY AND TEMPERATURE Figure Figure Submit Documentation Feedback

www.ti.com 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G015 LO = 0 dBm TA = 25°C 5.5 V 4.5 V 5 V 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G013 +5 dBm 0 dBm –5 dBm VCC = 5 V TA = 25°C f − Frequency − MHz −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 SS − Unadjusted Sideband Suppression − dBc G007 LO = 0 dB POUT = –3 dBm VCC = 5 V –40°C 85°C 25°C f − Frequency − MHz −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 SS − Unadjusted Sideband Suppression − dBc G008 LO = 0 dB POUT = –3 dBm TA = 25°C 4.5 V 5.5 V 5 V TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 TYPICAL CHARACTERISTICS (continued) OIP3 OIP3 vs vs FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND LO POWER Figure Figure 10. UNADJUSTED SIDEBAND SUPPRESSION UNADJUSTED SIDEBAND SUPPRESSION vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE Figure 11. Figure 12. Submit Documentation Feedback

www.ti.com f − Frequency − MHz −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 SS − Unadjusted Sideband Suppression − dBc G009 VCC = 5 V POUT = –3 dBm TA = 25°C –5 dBm 5 dBm 0 dBm −80 −70 −60 −50 −40 −30 −20 900 920 940 960 980 1000 f − Frequency − MHz SS − Adjusted Sideband Suppression − dBc G016 25°C 85°C Adj at 942.6 MHz VCC = 5 V –40°C −80 −70 −60 −50 −40 −30 −20 1850 1870 1890 1910 1930 1950 f − Frequency − MHz SS − Adjusted Sideband Suppression − dBc G017 25°C 85°C Adj at 1900 MHz VCC = 5 V –40°C −80 −70 −60 −50 −40 −30 −20 2100 2120 2140 2160 2180 2200 f − Frequency − MHz SS − Adjusted Sideband Suppression − dBc G018 Adj at 2140 MHz VCC = 5 V 25°C 85°C –40°C TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 TYPICAL CHARACTERISTICS (continued) UNADJUSTED SIDEBAND SUPPRESSION ADJUSTED SIDEBAND SUPPRESSION vs vs FREQUENCY AND LO POWER FREQUENCY AND TEMPERATURE Figure 13. Figure 14. ADJUSTED SIDEBAND SUPPRESSION ADJUSTED SIDEBAND SUPPRESSION vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND TEMPERATURE Figure 15. Figure 16. Submit Documentation Feedback

www.ti.com f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Room T emperature Noise − dBm/Hz G019 4.5 V 5.5 V 5 V POUT = –5 dBm LO = +5 dBm Temp = 25°C f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G020 85°C/0 dBm –40°C/0 dBm 25°C/0 dBm POUT = 0 dBm LO = +5 dBm VCC = 5 V f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G021 85°C/–5 dBm –40°C/–5 dBm 25°C/–5 dBm POUT = –5 dBm LO = +5 dBm VCC = 5 V f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G022 85°C/–10 dBm –40°C/–10 dBm 25°C/–10 dBm POUT = –10 dBm LO = +5 dBm VCC = 5 V TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 TYPICAL CHARACTERISTICS (continued) NOISE AT 13-MHz OFFSET (dBm/Hz) NOISE AT 13-MHz OFFSET (dBm/Hz) vs vs FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND TEMPERATURE Figure 17. Figure 18. NOISE AT 13-MHz OFFSET (dBm/Hz) NOISE AT 13-MHz OFFSET (dBm/Hz) vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND TEMPERATURE Figure 19. Figure 20. Submit Documentation Feedback

www.ti.com f − Frequency − MHz −80 −70 −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 CS − Unadjusted Carrier Feedthrough − dBm G025 LO = 0 dB TA = 25°C 4.5 V 5.5 V 5 V f − Frequency − MHz −80 −70 −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 CS − Unadjusted Carrier Feedthrough − dBm G026 LO = 0 dB VCC = 5 V 85°C –40°C 25°C TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 TYPICAL CHARACTERISTICS (continued) UNADJUSTED CARRIER FEEDTHROUGH UNADJUSTED CARRIER FEEDTHROUGH vs vs SUPPLY VOLTAGE FREQUENCY AND TEMPERATURE Figure 21. Figure 22. Submit Documentation Feedback

www.ti.com APPLICATION INFORMATION AND EVALUATION BOARD Basic Connections TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 See Figure for proper connection of the TRF3703 modulator. Connect a single power supply (4.5 V 5.5 to pins and 24. These pins should be decoupled as shown on pins and Connect pins 11, 12, 14, 17, 19, 20, and to GND. Connect a single-ended LO source of desired frequency to LOP (amplitude between dBm and dBm). This should be ac-coupled through a 100-pF capacitor. Terminate the ac-coupled LON with Ω to GND. Connect a baseband signal to pins I and Q The differential baseband inputs should be set to the proper level, 3.3 V for the TRF370333 or 1.5 V for the TRF370315. RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO baseband signal. This pin should also be ac-coupled through a 100-pF capacitor. All NC pins can be left floating. Submit Documentation Feedback

www.ti.com 100□pF 100□pF SMA_END NC1 GND2 LOP3 LON4 GND5 NC6 NC GND QN QP GND GND NC 13 GND 14 NC 15 RF_OUT 16 GND 17 VCCMOD 18GN D GND IP IN GN D VCCL O LOP SMA_END LON 2345 SMA_END IN 2 3 4 5 SMA_END IP 1000□pF 2 3 4 5 SMA_END 100□pF 1000□pF 2345 SMA_END QN 2 3 4 5 SMA_END QP RF_OUT 2POS_JUMPER 2POS_JUMPER C8 C9 4.7uF S0214-01 0.1 F (Note□1) /c109 0.1 F (Note□1) /c109

4.7 F/c109

(continued) (1) Do not install. Figure 23. TRF3703 EVM Schematic Submit Documentation Feedback

www.ti.com BBQP BBQN +5□V BBIPBBIN LOP LON +5□VGND GND 50 /c87 RF_OUT K001 TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 APPLICATION INFORMATION AND EVALUATION BOARD (continued) Figure shows the top view of the TRF3703 EVM board. Figure 24. TRF3703 EVM Board Layout Table Bill of Materials for TRF3703 EVM Value Footprint QTY Part Number Vendor Digi-Key Number REF DES Not Installed Tantalum 3216 T491A475K010AS KEMET 399-1561-1-ND C6, 4.7- μ 10-V, 10% capacitor 1000-pF, 50-V, 603 ECJ-1VC1H102J Panasonic PCC2151CT-ND C4, capacitor 100-pF, 50-V, 603 ECJ-1VC1H101J Panasonic PCC101ACVCT-ND C1, C2, capacitor Capacitor 603 C8, Submit Documentation Feedback

www.ti.com GSM RF_OUT VCXO Ref□Osc CLK2 CDCM7005 Clock□Gen TRF3761 PLL LO□Generator TRF3703 I/Q Modulator B0176-01 TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 APPLICATION INFORMATION AND EVALUATION BOARD (continued) Table Bill of Materials for TRF3703 EVM (continued) Value Footprint QTY Part Number Vendor Digi-Key Number REF DES Not Installed Ω resistor, 603 ERJ-3GEY0R00V Panasonic P0.0GCT-ND R1, R2, R3, 1/10-W, R4, TRF3703 24-QFN-PP- TI 4X4MM SMA connectors SMA_END_ 16F3627 Newark 142-0711-821 J1, J2, J3, SMALL J4, J5, J6, 2POS_HEADER 2POS_JUMP HTSW-150-07-L-S SAMTEC N/A W1, The TRF3703 is suited for GSM range. It also has excellent EVM performance, which makes it ideal for the stringent GSM/EDGE applications. The TRF3703 is also optimized for WCDMA (ACPR) and noise density are critically important. Using Texas instruments DAC568X series of high-performance digital-to-analog converters as depicted in Figure excellent ACPR levels were measured with one-, two-, and four-WCDMA carriers. See Electrical Characteristics f LO 2140 MHz for exact ACPR values. Figure 25. Typical Transmit Setup Block Diagram Submit Documentation Feedback

www.ti.com DEFINITION OF SPECIFICATIONS Unadjusted Carrier Feedthrough Adjusted (Optimized) Carrier Feedthrough Unadjusted Sideband Suppression Adjusted (Optimized) Sideband Suppression Suppressions Over Temperature f − Frequency Offset − kHz (Relative to Carrier) −80 −70 −60 −50 −40 −30 −20 −10 −200 −150 −100 −50 0 50 100 150 200 P − Power − dBm G024 3RD LSB (dBc) 3RD LSB 2ND LSB LSB (Undesired) POUT SBS (dBc) Carrier USB (Desired) 2ND USB (dBc) 2ND USB 3RD USB C (dBm) TRF3703 SLWS184D MARCH 2006 REVISED JUNE 2007 This specification measures the amount by which the local oscillator component is attenuated in the output spectrum of the modulator relative to the carrier. This further assumes that the baseband inputs delivered to the pins of the TRF3703 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs: I and Q This is measured in dBm. This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. This is measured in dBm. This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the output of the modulator, relative to the wanted sideband. This further assumes that the baseband inputs delivered to the modulator input pins are perfectly matched in amplitude and are exactly out of phase. This is measured in dBc. This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc. This specification assumes that the user has gone though the optimization process for the suppression in question, and set the optimal settings for the Q inputs. This specification then measures the suppression when temperature conditions change after the initial calibration is done. Figure shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. The graph assumes a baseband input of kHz. Figure 26. Graphical Illustration of Common Terms Submit Documentation Feedback

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TRF370315IRGER ACTIVE QFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR TRF370315IRGET ACTIVE QFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR TRF370333IRGER ACTIVE QFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR TRF370333IRGERG4 ACTIVE QFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR TRF370333IRGET ACTIVE QFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR TRF370333IRGETG4 ACTIVE QFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 22-Jun-2007 Addendum-Page 1

PACKAGE MATERIALS INFORMATION www.ti.com 13-Sep-2007 Pack Materials-Page 1

Device Package Pins Site Reel Diameter (mm) Reel Width (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W (mm) Pin1 Quadrant TRF370315IRGER RGE 24 SITE 60 330 12 4.3 4.3 1.5 8 12 Q1 TRF370315IRGET RGE 24 SITE 60 330 12 4.3 4.3 1.5 8 12 Q1 TRF370333IRGER RGE 24 SITE 60 330 12 4.3 4.3 1.5 8 12 Q2 TRF370333IRGET RGE 24 SITE 60 330 12 4.3 4.3 1.5 8 12 Q2 TAPE AND REEL BOX INFORMATION Device Package Pins Site Length (mm) Width (mm) Height (mm) TRF370315IRGER RGE 24 SITE 60 342.9 336.6 20.64 TRF370315IRGET RGE 24 SITE 60 407.0 336.6 97.0 TRF370333IRGER RGE 24 SITE 60 342.9 336.6 20.64 TRF370333IRGET RGE 24 SITE 60 342.9 336.6 20.64 PACKAGE MATERIALS INFORMATION www.ti.com 13-Sep-2007 Pack Materials-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 13-Sep-2007 Pack Materials-Page 3

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