16A10C DSK | Alldatasheet
Document overview
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Technical content
10.2± 0.2 ? 3.8± 0.15 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 2.5± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 PIN 1 PIN 3 CASE PIN 2
FEATURES
Case:JEDEC TO-220AB,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.71ounce, 2.006 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current C =120 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 8.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note1) C J pF Typical thermal resistance (Note2) R θJC Operating junction temperature range T J Storage temperature range T STG 100 200 400 600 800 1000 70 140 280 420 560 700 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 16 A TO-220AB Diffused junction Easily cleaned witn Freon,Alcohol,lsopropanol 16A10C - - - 16A100C 100 400 I FSM NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. - 55 ---- + 150 - 55 ---- + 150 I R 120 2.0 A and similar solvents I F(AV) 1.0 2. Thermal resistance from junction to case. µA PLASTIC SILICON RECTIFIERS The plastic material carries U/L recognition 94V-0 A 16A10C 16A20C 16A40C 16A60C 16A80C 16A100C 100 200 400 600 800 1000 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
Z R e s i s t i v e o r I nduct i ve Load 4.0 8.0 10075 125 175150 0.01 0.02 0.06 0.04 0.4 T J =25 Pulse Width=300uS 0.1 0.2 1.0 .1 .4 1.0 2 100 1000 4 10 20 40 100 f=1MHz T J =25 AMPERES AMPERES AMPERES CAPACITANCE, pF 16A10C---16A100C CASE TEMPERATURE,℃ INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT FIG.1 -- FORWARD DERATING CURVE FIG.2 -- TYPICAL FORWARD CHARACTERISTICS PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT NUMBER OF CYCLES AT 60Hz SURGE CURRENT FIG.3 --MAXIMUM NON-REPETITIVE FORWARD FIG.4 -- TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 1 2 4 10 8 20 40 60 80 100 T J =125 8.3ms Single Half Sine-Wave 100 200 300 400 www.diode.kr Diode Semiconductor Korea