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/G108Advanced Process Technology /G108Ultra Low On-Resistance /G108175°C Operating Temperature /G108Fast Switching /G108Repetitive Avalanche Allowed up to Tjmax /G108Lead-Free, RoHS Compliant /G108Automotive Qualified * Absolute Maximum Ratings /G83/G116/G114/G101/G115/G115/G101/G115/G32/G98/G101/G121/G111/G110/G100/G32/G116/G104/G111/G115/G101/G32/G108/G105/G115/G116/G101/G100/G32/G117/G110/G100/G101/G114/G32/G147/G65/G98/G115/G111/G108/G117/G116/G101/G32/G77/G97/G120/G105/G109/G117/G109/G32/G82/G97/G116/G105/G110/G103/G115/G148/G32/G109/G97/G121/G32/G99/G97/G117/G115/G101/G32/G112/G101/G114/G109/G97/G110/G101/G110/G116/G32/G100/G97/G109/G97/G103/G101/G32/G116/G111/G32/G116/G104/G101/G32/G100/G101/G118/G105/G99/G101/G46/G32/G84/G104/G101/G115/G101/G32/G97/G114/G101/G32/G115/G116/G114/G101/G115/G115 /G114/G97/G116/G105/G110/G103/G115/G32/G111/G110/G108/G121/G59/G32/G97/G110/G100/G32functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied./G69/G120/G112/G111/G115/G117/G114/G101/G32/G116/G111/G32/G97/G98/G115/G111/G108/G117/G116/G101/G45/G109/G97/G120/G105/G109/G117/G109/G45/G114/G97/G116/G101/G100/G32/G99/G111/G110/G100/G105/G116/G105/G111/G110/G115/G32/G102/G111/G114/G32/G101/G120/G116/G101/G110/G100/G101/G100/G32/G112/G101/G114/G105/G111/G100/G115/G32/G109/G97/G121/G32/G97/G102/G102/G101/G99/G116/G32/G100/G101/G118/G105/G99/G101/G32/G114/G101/G108/G105/G97/G98/G105/G108/G105/G116/G121/G46/G32/G84/G104/G101/G32/G116/G104/G101/G114/G109/G97/G108 /G114/G101/G115/G105/G115/G116/G97/G110/G99/G101/G32/G97/G110/G100/G32/G112/G111/G119/G101/G114/G32/G100/G105/G115/G115/G105/G112/G97/G116/G105/G111/G110/G32/G114/G97/G116/G105/G110/G103/G115/G32/G97/G114/G101/G32/G109/G101/G97/G115/G117/G114/G101/G100/G32/G117/G110/G100/G101/G114/G32/G98/G111/G97/G114/G100/G32/G109/G111/G117/G110/G116/G101/G100/G32/G97/G110/G100/G32/G115/G116/G105/G108/G108/G32/G97/G105/G114/G32/G99/G111/G110/G100/G105/G116/G105/G111/G110/G115/G46/G32/G65/G109/G98/G105/G101/G110/G116/G32/G116/G101/G109/G112/G101/G114/G97/G116/G117/G114/G101/G32/G40/G84/G65/G41 /G105/G115/G32/G50/G53/G176/G67/G44/G32/G117/G110/G108/G101/G115/G115/G32/G111/G116/G104/G101/G114/G119/G105/G115/G101/G32/G115/G112/G101/G99/G105/G102/G105/G101/G100/G46 HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ AUTOMOTIVE GRADE /G80/G68/G32/G45/G32/G57/G54/G52/G48/G52/G65 S D G D D S G Parameter Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) IDM Pulsed Drain Current /c100 PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery /c102 V/ns EAS ( Ther mally limited) Single Pulse Avalanche Energy /c101 mJ IAR Avalanche Current /c3/c100 A EAR Repetitive Avalanche Energy /c103 mJ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case /c107 ––– 0.65 RθJA Junction-to-Ambient (PCB Mount) , D 2Pak /c106 ––– 40 Max. 128/c99 90/c99 512 120 -55 to + 175 ± 20 1.5 °C/W A 300 See Fig. 14, 15, 22a, 22b 140 230 6.7 VDSS 75V RDS(on) typ. 4.6m Ω max. 5.8m Ω ID (Silicon Limited) 128A/c99 ID (Package Limited) 120A

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 2 www.irf.com /G78/G111/G116/G101/G115/G58 /G129/G32Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. /G130Repetitive rating; pulse width limited by max. junction temperature. /G131Limited by TJmax, starting TJ = 25°C, L = 0.050mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. S D G /G132ISD ≤ 75A, di/dt ≤ 1570A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. /G133Pulse width ≤ 400μs; duty cycle ≤ 2%. /G134Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. /G135Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. /G136When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. /G137Rθ is measured at T J approximately 90°C. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.094 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.6 5.8 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 320 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 0.70 ––– Ω Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 79 110 Qgs Gate-to-Source Charge ––– 19 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 24 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 55 ––– td(on) Turn-On Delay Time ––– 15 ––– td(off) Turn-Off Delay Time ––– 38 ––– Ciss Input Capacitance ––– 4750 ––– Coss Output Capacitance ––– 420 ––– Crss Reverse Transfer Capacitance ––– 190 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 440 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 410 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) /c3/c100 /c105 VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 33 50 T J = 25°C V R = 64V, ––– 39 59 T J = 125°C I F = 75A Qrr Reverse Recovery Charge ––– 42 63 T J = 25°C di/dt = 100A/μs /c103 ––– 56 84 T J = 125°C IRRM Reverse Recovery Current ––– 2.2 ––– A T J = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) TJ = 25°C, IS = 75A, VGS = 0V /c103 integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA/c100 VGS = 10V, ID = 75A /c103 VDS = VGS, ID = 150μA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C showing the VDS = 38V Conditions VGS = 10V /c103 VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V /c105/c3 VGS = 0V, VDS = 0V to 60V /c104 ID = 75A Conditions VDS = 50V, ID = 75A ID = 75A VGS = 20V VGS = -20V MOSFET symbol RG = 2.6Ω VGS = 10V /c103 VDD = 49V ID = 75A, VDS =0V, VGS = 10V pF A ns nC μA nA nC ns 128/c99 512

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 www.irf.com 3 † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage Qualification Information 3L-D2 PAK MSL1 3L-TO-262 N/A Charged Device Model Class C5(+/- 2000V )††† (per AEC-Q101-005) Qualification Level Automotiv e (per AEC-Q101) †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level RoHS Compliant Yes ESD Machine Model Class M4(+/- 800V ) ††† (per AEC-Q101-002) Human Body Model Class H1C(+/- 2000V )††† (per AEC-Q101-001)

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 4 www.irf.com Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V ≤60μs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) 4.5V ≤60μs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 2 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) TJ = 25°C TJ = 175°C VDS = 25V ≤60μs PULSE WIDTH 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance (pF) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 RDS(on) , Drain-to-Source On Resistance (Norm alized) ID = 72A VGS = 10V 0 1 02 03 04 05 06 07 08 09 0 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VGS, Gate-to-Source Voltage (V) VDS= 60V VDS= 38V VDS= 15V ID= 72A

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 www.irf.com 5 Fig 8. Maximum Safe Operating Area Fig 10. Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 11. Typical COSS Stored Energy Fig 9. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Avalanche Energy vs. DrainCurrent VSD, Source-to-Drain Voltage (V) 0.1 100 1000 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Temperature ( °C ) 100 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Id = 5mA 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Energy (μJ) 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 100 1000 10000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25°C Tj = 175°C Single Pulse 100μsec 1msec 10msec DC 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 100 200 300 400 500 600 EAS , Single Pulse Avalanche Energy (m J) ID TOP 15A 26A BOTTOM 75A 25 50 75 100 125 150 175 TC , Case Temperature (°C) 100 125 150 ID, Drain Current (A) Limited By Package

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 6 www.irf.com Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 14. Typical Avalanche Current vs.Pulsewidth Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) =/G32/G68T/ ZthJC Iav = 2/G68T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.1164 0.000088 0.3009 0.001312 0.2313 0.009191 τJ τJ τ τC Ci i/Ri Ci= τi/Ri tav (sec) 0.1 100 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25°C and Tstart = 150°C.

0.01 Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Δ Tj = 150°C and Tstart =25°C (Single Pulse) 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 100 125 150 EAR , Avalanche Energy (m TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 75A

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 www.irf.com 7 /G70/G105/G103/G46/G32/G49/G55/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G67/G117/G114/G114/G101/G110/G116/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116Fig 16. Threshold Voltage vs. Temperature /G70/G105/G103/G46/G32/G49/G57/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G83/G116/G111/G114/G101/G100/G32/G67/G104/G97/G114/G103/G101/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116/G70/G105/G103/G46/G32/G49/G56/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G67/G117/G114/G114/G101/G110/G116/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116 /G70/G105/G103/G46/G32/G50/G48/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G83/G116/G111/G114/G101/G100/G32/G67/G104/G97/G114/G103/G101/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116 -75 -50 -25 0 25 50 75 100 125 150 175 200 TJ , Temperature ( °C ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS(th), Gate threshold Voltage (V) ID = 150μA ID = 250μA ID = 1.0mA ID = 1.0A 0 200 400 600 800 1000 diF /dt (A/μs) IRR (A) IF = 48A VR = 64V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/μs) 100 180 260 340 420 QRR (A) IF = 48A VR = 64V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/μs) IRR (A) IF = 72A VR = 64V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/μs) 100 180 260 340 420 QRR (A) IF = 72A VR = 64V TJ = 25°C TJ = 125°C

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 8 www.irf.com Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms VGS VDS 90% 10% td(on) td(off)tr tf VGS Pulse Width < 1μs Duty Factor < 0.1% VDD VDS LD D.U.T Fig 21b. Unclamped Inductive WaveformsFig 21a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20VVGS Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20. /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116/G32for N-Channel HEXFET/G174/G32Power MOSFETs VCC DUT L /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115

  • /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G42 /G131 /G132/G130 /G82/G71 /G86/G68/G68• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
  • /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
  • /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
  • /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G129 /G73/G110/G100/G117/G99/G116/G111/G114/G32/G67/G117/G114/G114/G101/G110/G116

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 www.irf.com 9 /G68/G50/G80/G97/G107/G32/G40/G84/G79/G45/G50/G54/G51/G65/G66/G41/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32 /G97/G114/G101/G32 /G115/G104/G111/G119/G110/G32 /G105/G110/G32 /G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32 /G40/G105/G110/G99/G104/G101/G115/G41 /G68/G50/G80/G97/G107/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47 /G76/G111/G116/G32/G67/G111/G100/G101 /G89/G87/G87/G65 /G88/G88/G32/G32/G32/G32/G111/G114/G32/G32/G32/G32/G88/G88 /G80/G97/G114/G116/G32/G78/G117/G109/G98/G101/G114 /G73/G82/G32/G76/G111/G103/G111 /G65/G85/G70/G83/G51/G51/G48/G55/G90 /G68/G97/G116/G101/G32/G67/G111/G100/G101 /G89/G61/G32/G89/G101/G97/G114 /G87/G87/G61/G32/G87/G111/G114/G107/G32/G87/G101/G101/G107 /G65/G61/G32/G65/G117/G116/G111/G109/G111/G116/G105/G118/G101/G44/G32/G76/G101/G97/G100/G32/G70/G114/G101/G101

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 10 www.irf.com TO-262 Part Marking Information Dimensions are shown in millimeters (inches) /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47 /G76/G111/G116/G32/G67/G111/G100/G101 /G89/G87/G87/G65 /G88/G88/G32/G32/G32/G32/G111/G114/G32/G32/G32/G32/G88/G88 /G80/G97/G114/G116/G32/G78/G117/G109/G98/G101/G114 /G73/G82/G32/G76/G111/G103/G111 /G65/G85/G70/G83/G76/G51/G51/G48/G55/G90 /G68/G97/G116/G101/G32/G67/G111/G100/G101 /G89/G61/G32/G89/G101/G97/G114 /G87/G87/G61/G32/G87/G111/G114/G107/G32/G87/G101/G101/G107 /G65/G61/G32/G65/G117/G116/G111/G109/G111/G116/G105/G118/G101/G44/G32/G76/G101/G97/G100/G32/G70/G114/G101/G101

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 www.irf.com 11 /G68/G50/G80/G97/G107/G32/G40/G84/G79/G45/G50/G54/G51/G65/G66/G41/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 12 www.irf.com

Ordering Information

Base part Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL3307Z TO-262 Tube 50 AUIRFSL3307Z AUIRFS3307Z D2Pak Tube 50 AUIRFS3307Z Tape and Reel Left 800 AUIRFS3307ZTRL Tape and Reel Right 800 AUIRFS3307ZTRR

/G65/G85/G73/G82/G70/G83/G47/G83/G76/G51/G51/G48/G55/G90 www.irf.com 13 /G73/G77/G80/G79/G82/G84/G65/G78/G84/G32/G78/G79/G84/G73/G67/G69 Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105