160NDD NAINA | Alldatasheet
Document overview
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Technical content
Features
- Improved glass passivation for high reliability
- Exceptional stability at high temperatures
- High di/dt and dv/dt capabilities
- Low thermal resistance Thermal & Mechanical Specifications Parameter Operating junction temperature range Thermal resistance, junction to case Electrical Characteristics (T A = 25 OC unless otherwise Parameter Maximum average on-state current, 180 0C sinusoidal Maximum repetitive peak reverse voltage range Forward voltage drop RMS isolation voltage Maximum Ratings (T A = 25 0C unless otherwise noted) Parameter Symbol Maximum average forward current @ T J = 85 0C IF(AV) Maximum average RMS forward current I F(RMS) Maximum non-repetitive surge current @ t = 10ms I FSM Maximum I 2t for fusing @ t = 10ms I2t emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120- 4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com Diode – Diode Module Improved glass passivation for high reliability Exceptional stability at high temperatures Thermal & Mechanical Specifications (T A = 25 0C unless otherwise noted) Symbol TJ - Rth(JC) C unless otherwise noted) Symbol C sinusoidal I T(max) Maximum repetitive peak reverse voltage range V RRM VFM VISO C unless otherwise noted) Values Units 160 A 251 A 4300 A 75 kA 2s M3 PACKAGE 160NDD 4205450 • Fax: 0120 -4273653 www.nainasemi.com Values Units -65 to +125 0C 0.2 0C/W Values Units 160 A 200 to 1600 V 1.35 V 2500 V M3 PACKAGE
2 D-95, Sector 63, Noida
sales@nainasemi.com Diode Configuration emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120- 4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com ALL DIMENSIONS ARE IN MM 160NDD 4205450 • Fax: 0120 -4273653 www.nainasemi.com