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Features

Excellent power volume ratio Insulated type MDS - 160 Voltage Ratings (TJ = 250C unless otherwise noted) Type number Voltage code VRRM, Max. repetitive peak reverse voltage (V) VRSM, Max. non- repetitive peak reverse voltage (V) IRRM max @ TJ max (mA)

160 MDS

Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Parameters Symbol Values Units Maximum operating junction temperature range TJ - 40 to + 150 0C Maximum storage temperature range TStg - 40 to + 150 0C Maximum thermal resistance, junction to case DC operation per module Rth(JC) 0.12 0C/W DC operation per junction 0.73 120 Rect conduction angle per module 0.15 120 Rect conduction angle per junction 0.88 Maximum thermal resistance, case to heatsink Per module, Mounting surface smooth, flat and greased Rth(CS) 0.03 0C/W Mounting torque ±10% to heatsink T 4 to 6 Nm to terminal 3 to 4 Approximate weight 176 g

Naina Semiconductor Ltd. 160 MDS

2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 -4273653

sales@nainasemi.com • www.nainasemi.com Electrical Specifications (TJ = 250C unless otherwise noted) Parameters Conditions Symbol Values Units Maximum DC output current 1200 Rect conduction angle, TC = 850C I0 160 A Maximum peak one-cycle forward, non-repetitive surge current t = 10ms No voltage reapplied TJ = TJ max. IFSM 1430 A t = 8.3ms 1500 t = 8.3ms 100% VRRM reapplied 1200 t = 10ms 1260 Maximum I2t for fusing T = 8.3ms No voltage reapplied I2t 10200 A2s T = 10ms 9300 T = 8.3ms 100% VRRM reapplied 7200 T = 10ms 6600 Maximum J2√t for fusing T = 0.1 to 10ms, no voltage reapplied J2√t 102000 A2√s Low level value of threshold voltage [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max VF(TO)1 0.81 V High level value of threshold voltage [ I > π > IF(AV) ], @ TJ max VF(TO)2 1.04 V Low level value of forward slope resistance [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max r1 3.52 mΩ High level value of forward slope resistance [ I > π * IF(AV) ], @ TJ max r2 3.13 mΩ Maximum forward voltage drop Ipk = 100A, tP = 400 µs single junction VFM 1.49 V RMS isolation voltage f = 50Hz, t = 1ms, all terminals shorted VISO 4000 V Diode Configuration

Naina Semiconductor Ltd. 160 MDS

3 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 -4273653

sales@nainasemi.com • www.nainasemi.com ALL DIMENSIONS IN MM