15SQ045 THINKISEMI | Alldatasheet
Document overview
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Technical content
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Case: R-6 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.072 ounce, 2.05 grams MECHANICAL DATA R-6 0.360 (9.1) 0.340(8.6) DIA. 0.052 (1.3) 0.048 (1.2) DIA. 0.360(9.1) 0.340(8.6) Dimensions in inches and (millimeters) 1.0 (25.4) MIN. 1.0 (25.4) MIN. 15SQ045 Pb Free Plating Product 15SQ045 15A,45V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode Pb © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2Rev.05 PARAMETER SYMBOL 15SQ045 UNIT Maximum Repetitive Peak Reverse Voltage V RRM 45 V Maximum DC Blocking Voltage V DC(AV) 45 V Average Rectified Output Current @Tc=115° C I F 15 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load I FSM 275 A Maximum Forward Voltage at 15A DC Note(1) Tj=25° C V F 0.55 V Maximum DC Reverse Current at Rated DC Blocking Voltage Tj=25° C Tj=100° C IR 1.0 100 mA Typical Thermal Resistance (Note 2) C J 1300 pF Typical thermal resistance (Note 3) R Θ JL R Θ JC R Θ JA 2.0 7.0 ° C/W Operating junction temperature T J 150 ° C Junction temperature in DC forward current without reverse bias, t 1 h Tj (Note 4) 200 ° C Storage temperature range T STG -55 to +150 ° C Note : (1) 300us Pulse Width, 2% Duty Cycle. (2) Measured at 1.0MHz and applied reverse voltage of 4.0 V DC (3) Thermal Resistance test performed in accordance with JESD-51; RthjL is measured on 1mm from body and RthjC is measured on surface center of body. (4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test.
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.05 RATINGS AND CHARACTERISTIC CURVES FIG.1- FORWARD CURRENT DERATING CURVE 0 25 50 75 100 125 150 CASE TEMPERATURE, ( AVERAGE FORWARD CURRENT, (A) FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT 135 180 225 270 1 10 100 NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURRENT, (A) FIG.3- TYPICAL JUNCTION CAPACITANCE 100 1000 10000 1 10 100 REVERSE VOLTAGE, (V) Capacitance,(pF) FIG.4- TYPICAL FORWARD CHARACTERISTICS 0.01 0.1 100 INSTANTANEOUS FORWARD VOLTAGE, (V) INSTANTANEOUS FORWARD CURRENT, (A) FIG.5- TYPICAL REVERSE CHARACTERISTICS 0.01 0.1 100 1000 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS REVERSE CURRENT, (mA) PULSE WIDTH 300us, 2% Duty Cycle 8.3ms Single Half Sine-Wave RESISTIVE OR INDUCTIVE LOAD Tj=25 C Tj=1 C Tj=125° C Tj=25° C, Tj=15 C