STFU15NM65N STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuit
- 4 Package information
- 4.1 TO-220FP ultra narrow leads package information
- 5 Revision history
Features
Order code VDS RDS(on) max ID STFU15NM65N 650 V 0.38 Ω 12 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STFU15NM65N 15NM65N TO-220FP ultra narrow leads Tube TO-220FP ultra narrow leads 1 2 3
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain source voltage 650 V VGS Gate source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 12(1) A Drain current (continuous) at TC = 100 °C 7.56 IDM(2) Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25 °C 30 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V dv/dt (3) Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Operating junction temperature Notes: (1)Limited by maximum junction temperature. (2)Pulse width limited by safe operating area. (3)ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 4.17 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 3 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V) 187 mJ
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V 1 µA VDS = 650 V, TC = 125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±100 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 0.35 0.38 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V - 983 - pF Coss Output capacitance - 57 - Crss Reverse transfer capacitance - 4.5 - Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 146 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4.9 - Ω Qg Total gate charge VDD = 520 V, ID = 12 A, VGS = 10 V - 33.3 - nC Qgs Gate-source charge - 5.7 - Qgd Gate-drain charge - 17 - Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V - 55.5 - ns tr Rise time - 8.5 - td(off) Turn-off delay time - 14 - tf Fall time - 11.4 -
Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 12 A ISDM(1) Source-drain current (pulsed) 48 A VSD(2) Forward on voltage ISD = 12 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V - 428 ns Qrr Reverse recovery charge - 4.7 µC IRRM Reverse recovery current - 21.5 A trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C - 570 ns Qrr Reverse recovery charge - 6.2 µC IRRM Reverse recovery current - 22 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Static drain-source on-resistance Figure 7: Gate charge vs gate-source voltage
3 Test circuit
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP ultra narrow leads package information
Figure 19: TO-220FP ultra narrow leads package outline 8576148_1
Table 9: TO-220FP ultra narrow leads mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.60 F 0.65 0.75 F1 - 0.90 G 4.95 5.20 G1 2.40 2.54 2.70 H 10.00 10.40 L2 15.10 15.90 L3 28.50 30.50 L4 10.20 11.00 L5 2.50 3.10 L6 15.60 16.40 L7 9.00 9.30 L8 3.20 3.60 L9 - 1.30 Dia. 3.00 3.20
5 Revision history
Table 10: Document revision history Date Revision Changes 16-Mar-2015 1 Initial release 09-Sep-2015 2 Datasheet status promoted from preliminary to production data.