15N70L-T3P-T

15N70 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-839.a 15A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switch ing speed and low gate charge. It can also withstand high energy pulse in the avalanche and commutation modes. The UTC 15N70 is suitable for high efficiency switching DC/DC converter, motor control and switch mode power supply. „ FEATURES * RDS(ON)=0.43Ω @VGS=10V,ID=7.5A * Low gate charge ( Typ=70nC ) * Low C RSS ( Typ=27pF ) * High switching speed „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 15N70L-T3P-T 15N70G-T3P-T TO-3P G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

15N70 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Ver.a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 700 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous TC=25°C ID 15 A TC=100°C 9.5 A Pulsed (Note 2) I DM 60 A Avalanche Current (Note 2) I AR 15 A Avalanche Energy Single Pulsed (Note 3) E AS 950 mJ Repetitive (Note 2) E AR 30 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) PD 300 W Derate above 25°C 2.38 W/°C Junction Temperature T J -55~+150 °C Storage Temperature Range T STG -55~+150 °C Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limi ted by max. junction temperature. 3. L=7.8mH, I AS=15A, VDD=50V, RG=25Ω, Starting TJ=25°C, 4. I SD≤15A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤25°C. „ THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C/W Junction to C a s e θJC 0.42 °C/W Case to Sink θCS 0.24 °C/W

15N70 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 3 9 . a „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 700 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J Reference to 25°C, ID=250µA 0.68 V/°C Drain-Source Leakage Current I DSS VDS=700V, VGS=0V 10 µA VDS=560V, TC=125°C 100 µA Gate-Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=7.5A 0.43 0.56 Ω Forward Transconductance g FS V DS=50V, ID=7.5A (Note 1) 15 S DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 2790 3600 pF Output Capacitance C OSS 300 390 pF Reverse Transfer Capacitance C RSS 27 35 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=560V, ID=15A (Note 1, 2) 70 90 nC Gate to Source Charge Q GS 17 nC Gate to Drain Charge Q GD 33 nC Turn-ON Delay Time t D(ON) VDD=350V, ID=15A, RG=25Ω (Note 1, 2) 70 150 ns Rise Time t R 180 370 ns Turn-OFF Delay Time t D(OFF) 160 330 ns Fall-Time t F 120 250 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 15 A Maximum Body-Diode Pulsed Current I SM 60 A Drain-Source Diode Forward Voltage V SD I S=15A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR IS=15A, VGS=0V, dIF/dt=100A/µs (Note1) 460 ns Body Diode Reverse Recovery Charge Q RR 5.7 µC Notes: 1. Pulse Test: Pulse width ≤300µs, Duty cycle≤2% 2. Essentially independent of operating temperature

15N70 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 3 9 . a „ TEST CIRCUITS AND WAVEFORMS VGS DUT RG VDS RD Resistive Switching Test Circuit Resistive Switching Waveforms VDS VGS 90% 10% td(ON) tR tFtd(OFF) 10V tON tOFF

15N70 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 3 9 . a „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms

15N70 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 3 9 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.