15N65

15N65_11 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 15N65 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-481.d 15A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and supe rior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N65 is universally applied in active power factor correction and high efficient switched mode power supplies. „ FEATURES * RDS(ON)=0.65Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability „ SYMBOL TO-247 TO-220F2 „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 15N65L-TF2-T 15N65G-TF2-T TO-220F2 G D S Tube 15N65L-T47-T 15N65G-T47-T TO-247 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

15N65 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 4 8 1 . d „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 650 V Gate to Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 15 A Continuous Drain Current Continuous I D 15 A Pulsed (Note 2) I DM 60 A Avalanche Energy Single Pulsed (Note 3) E AS 637 mJ Repetitive (Note 2) E AR 25.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F2 PD 38.5 W TO-247 312 Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width lim ited by maximum junction temperature 3. L=5.23mH, I AS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. I SD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F2 θJA 62.5 °C/W TO-247 40 J u n c t i o n t o C a s e TO-220F2 θJC 3.3 °C/W TO-247 0.4

15N65 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 4 8 1 . d „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA, TJ=25°C 650 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C 0.65 V/°C Drain-Source Leakage Current I DSS VDS=650V, VGS=0V 1 µA VDS=520V, TC=125°C 10 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=7.5A 0.5 0.65 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V,VGS=0V,f=1.0MHz 2380 3095 pF Output Capacitance C OSS 295 385 pF Reverse Transfer Capacitance C RSS 23.6 35.5 pF SWITCHING PARAMETERS Total Gate Charge Q G VDS=520V, VGS=10V, ID=15A (Note 1,2) 48.5 63.0 nC Gate-Source Charge Q GS 14.0 nC Gate-Drain Charge Q GD 21.2 nC Turn-ON Delay Time t D(ON) VDD=325V, ID=15A, RG=21.7Ω (Note 1,2) 65 140 ns Turn-ON Rise Time t R 125 260 ns Turn-OFF Delay Time t D(OFF) 105 220 ns Turn-OFF Fall Time t F 65 140 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 15 A Maximum Body-Diode Pulsed Current I SM 60 A Drain-Source Diode Forward Voltage V SD I S =15A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr VGS=0V, IS=15A, dIF/dt=100A/μs (Note 1) 496 ns Body Diode Reverse Recovery Charge Q RR 5.69 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Drain current limited by maximum junction temperature

15N65 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 4 8 1 . d „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current

15N65 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 4 8 1 . d „ TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

15N65 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 4 8 1 . d UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.