15N60G-T47-T

15N60 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-485.a

15 Amps, 600 Volts

„ DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N60 is universally applied in active power factor correction and high efficient switched mode power supplies. „ FEATURES * 15A, 600V, RDS(ON)=0.44Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability „ SYMBOL „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 15N60L-T47-T 15N60G-T47-T TO-247 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

15N60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R502-485.a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 600 V Gate to Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 15 A Continuous I D 15 A Continuous Drain Current Pulsed (Note 1) I DM 60 A Single Pulsed (Note 2) E AS 637 mJ Avalanche Energy Repetitive (Note 1) E AR 25.0 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation P D 312 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C/W J u n c t i o n t o C a s e θJC 0.4 °C/W

15N60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R502-485.a „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA, TJ=25°C 600 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 0.65 V/°C VDS=600V, VGS=0V 1 µADrain-Source Leakage Current I DSS VDS=520V, TC=125°C 10 µA Forward V GS=+30V, VDS=0V +100 nAGate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=7.5A 0.36 0.44 Ω Forward Transconductance g FS V DS=40V, ID=7.5A (Note 4) 19.2 S DYNAMIC PARAMETERS Input Capacitance C ISS 2380 3095 pF Output Capacitance C OSS 295 385 pF Reverse Transfer Capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz 23.6 35.5 pF SWITCHING PARAMETERS Total Gate Charge Q G 48.5 63.0 nC Gate-Source Charge Q GS 14.0 nC Gate-Drain Charge Q GD VDS=520V, VGS=10V, ID=15A (Note 4,5) 21.2 nC Turn-ON Delay Time t D(ON) 65 140 ns Turn-ON Rise Time t R 125 260 ns Turn-OFF Delay Time t D(OFF) 105 220 ns Turn-OFF Fall Time t F VDD=325V, ID=15A, RG=21.7Ω (Note 4,5) 65 140 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 15 A Maximum Body-Diode Pulsed Current I SM 60 A Drain-Source Diode Forward Voltage V SD I S =15A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR 496 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=15A, dIF/dt=100A/μs (Note 4) 5.69 μC Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=5.23mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Drain current limited by maximum junction temperature

15N60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R502-485.a „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET w w w . u n i s o n i c . c o m . t w 5 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd VER.a 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

15N60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw V E R . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.