STL15N60DM6 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 PowerFLAT 5x6 HV package information
- 4.2 PowerFLAT 5x6 packing information
Features
Order code VDS RDS(on) max. ID PTOT STL15N60DM6 600 V 372 mΩ 8.5 A 64 W
- Fast-recovery body diode
- Lower R DS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STL15N60DM6 Product summary Order code STL15N60DM6 Marking 15N60DM6 Package PowerFLAT™ 5x6 HV Packing Tape and reel N-channel 600 V, 295 mΩ typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package STL15N60DM6 Datasheet DS13209 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
- Pulse width limited by T J max.
Table 2. Thermal data
- When mounted on an 1-inch² FR-4, 2 Oz copper board.
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 3. Static
- Defined by design, not subject to production test.
Table 4. Dynamic
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 5. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 6. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. STL15N60DM6
Package information
4.1 PowerFLAT 5x6 HV package information
Figure 19. PowerFLAT 5x6 HV package outline
Table 7. PowerFLAT 5x6 HV mechanical data Figure 20. PowerFLAT™ 5x6 HV recommended footprint (dimensions are in mm)
4.2 PowerFLAT 5x6 packing information
Figure 21. PowerFLAT 5x6 tape (dimensions are in mm) Figure 22. PowerFLAT 5x6 package orientation in carrier tape
Figure 23. PowerFLAT 5x6 reel
Revision history
Table 8. Document revision history 07-Jan-2020 1 First release. 03-Jul-2020 2 Updated Table 1. Absolute maximum ratings.