15N60-MT

15N60-MT UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 15N60-MT Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2020 Unisonic Technologies Co., Ltd QW-R205-556.B 15A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N60-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on- state resistance and a high rugged avalanche c haracteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC-DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 0.47 Ω @ VGS=10V, ID=7.5A * Fast switching * Improved dv/dt capability  SYMBOL 1.Gate 3.Source 2.Drain TO-220F1 TO-220 TO-220F2 TO-220F  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 15N60L-TA3-T 15N60G-TA3-T TO-220 G D S Tube 15N60L-TF1-T 15N60G-TF1-T TO-220F1 G D S Tube 15N60L-TF2-T 15N60G-TF2-T TO-220F2 G D S Tube 15N60L-TF3-T 15N60G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube, R: Tape Reel (2) TF1: TO-220F1, TF2: TO-220F2 (3) G: Halogen Free and Lead Free, L: Lead Free 15N60G-TA3-T (1)Packing Type (2)Package Type (3)Green Package  MARKING UTC

15 N60

L: Lead Free G: Halogen Free Date CodeLot Code

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R205-556.B  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 15 A Pulsed (Note 2) IDM 30 A Avalanche Energy Single Pulsed (Note 3) EAS 806 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.7 V/ns Power Dissipation TO-220 PD 250 W TO-220F/TO-220F1 TO-220F2 40 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the dev ice could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 12.7A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.5 °C/W TO-220F/TO-220F1 TO-220F2 3.125 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R205-556.B  ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 µA Gate-Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A 0.47 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0 MHz 2200 pF Output Capacitance COSS 225 pF Reverse Transfer Capacitance CRSS 12 pF SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=480V, VGS=10V, ID=15A IG=1mA (Note 1, 2) 49 nC Gate-Drain Charge QGD 13 nC Gateource Charge QGS 10 nC SWITCHING CHARACTERISTICS Turn-on Delay Time (Note 1) tD(ON) VDS=100V, VGS=10V, ID=15A, RG=25Ω (Note 1, 2) 30 ns Rise Time tR 25 ns Turn-off Delay Time tD(OFF) 165 ns Fall-Time tF 38 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 15 A Maximum Body-Diode Pulsed Current ISM 60 A Drain-Source Diode Forward Voltage (Note 1) VSD VGS=0V, IS=15A 1.4 V Reverse Recovery Time (Note 1) trr VGS=0V, IS=15A, dIF/dt=100A/µs (Note1) 440 ns Reverse Recovery Charge Qrr 7 µC Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R205-556.B  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test ISD Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R205-556.B  TEST CIRCUITS AND WAVEFORMS VGS D.U.T. RG VDS RL VDD Pulse Width≤ 1μs Duty Factor≤0.1% VDS 90% 10%VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms DUT VDS Same Type as D.U.T. VGS Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform D.U.T. RD VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R205-556.B  TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R205-556.B  TYPICAL CHARACTERISTICS (Cont.)

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R205-556.B  TYPICAL CHARACTERISTICS (Cont.)