Microsoft Word - 15N20-D
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- Manufacturer or author: q-ikuko
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UNISONIC TECHNOLOGIES CO., LTD 15N20 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-717.D 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N20 is universally applied in low voltage such as automotive, high efficiency switch ing for DC/DC converters and DC motor control, etc. FEATURES * RDS(ON)<0.28Ω @ VGS=10V * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 15N20L-TA3-T 15N20G-TA3-T TO-220 G D S Tube 15N20L-TN3-R 15N20G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING
UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R502-717.D ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 200 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current Continuous I D 15 A Pulsed I DM 60 A Single Pulsed Avalanche Current I AS 15 A Single Pulsed Avalanche Energy E AS 340 mJ Power Dissipation TO-220 PD 145 W TO-252 83 Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220 θJA 62.5 °C/W TO-252 110 Junction to Case TO-220 θJC 0.86 °C/W TO-252 1.5 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 200 V Drain-Source Leakage Current I DSS V DS=200V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3 5 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=7.5A 0.18 0.28 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 610 800 pF Output Capacitance C OSS 145 200 pF Reverse Transfer Capacitance C RSS 42 60 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDD=50V, ID=1.3A 27 32 nC Gate to Source Charge Q GS 5.6 nC Gate to Drain Charge Q GD 10 nC Turn-ON Delay Time t D(ON) VDD=30V, ID=0.5A, RG=25Ω, VGS=10V, RL=30 Ω 39 45 ns Rise Time t R 63 90 ns Turn-OFF Delay Time t D(OFF) 210 230 ns Fall-Time t F 83 110 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 15 A Maximum Body-Diode Pulsed Current I SM 60 A Drain-Source Diode Forward Voltage V SD I S=15A, VGS=0V 1.5 V
UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R502-717.D TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.70 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 100 150 200 250 300 0 50 150 200 250100 100 150 200 250 300 Drain Current, ID (A) Body-Diode Continuous Current, IS (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.