15N10

15N10 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

UNISONIC TECHNOLOGIES CO., LTD 15N10 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-846.B 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC 15N10 is suitable for high efficiency switching DC/DC converter, LCD display inverter and load switch. „ FEATURES * RDS(ON)=0.08Ω @VGS=10V,ID=8A * Low gate charge (Typ=24nC) * Low C RSS (Typ=23pF) * High switching speed „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 15N10L-TN3-T 15N10G-TN3-T TO-252 G D S Tube 15N10L-TN3-R 15N10G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 6 . B „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous TC=25°C, TJ=150°C ID 14.7 A TC=70°C, TJ=150°C 13.6 A Pulsed I DM 59 A Power Dissipation TC=25°C PD 34.7 W TC=70°C 22.2 W Operating Junction Temperature T J -55~+150 °C Note: Absolute maximum ratings are those values be yond which the device coul d be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Junction to Case (Note) θJC 3.6 °C/W Note: The device mounted on 1in2 FR4 board with 2 oz copper. „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 100 V Drain-Source Leakage Current I DSS V DS=80V, VGS=0V 1 µA Gate-Source Leakage Current I GSS VGS=+20V, VDS=0V +100 nA VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 1 3 V Drain-Source On-State Resistance (Note) R DS(ON) V GS=10V, ID=8A 80 100 m Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=15V, f=1MHz 890 pF Output Capacitance C OSS 58 pF Reverse Transfer Capacitance C RSS 23 pF SWITCHING PARAMETERS Total Gate Charge Q G V GS=10V, VDS=80V, ID=10A 24 nC Total Gate Charge Q G VGS=4.5V, VDS=80V, ID=10A 13 nC Gate to Source Charge Q GS 4.6 nC Gate to Drain Charge Q GD 7.6 nC Gate-Resistance R G V DS=0V, VGS=0V, f=1MHz 0.9 Ω Turn-ON Delay Time t D(ON) VDS=50V, RL=5Ω, VGEN=10V, RG=1Ω 14 ns Rise Time t R 33 ns Turn-OFF Delay Time t D(OFF) 39 ns Fall-Time t F 5 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I S=8A, VGS=0V 0.9 1.2 V Note: Pulse test: pulse width ≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing.

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 6 . B „ TEST CIRCUITS AND WAVEFORMS VGS DUT RG VDS RD Resistive Switching Test Circuit Resistive Switching Waveforms VDS VGS 90% 10% td(ON) tR tFtd(OFF) 10V tON tOFF

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 6 . B „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 6 . B „ TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS (V) 0.40 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 100 150 200 250 300 0 30 90 120 60 100 150 200 250 300 VDS=VGS Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 0 0.1 0.2 0.3 0.4 VGS=10V 0.6 0 Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Drain Current, ID (A) 0.5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.