PJD15N06L PANJIT | Alldatasheet

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Technical content

PAGE . 1STAD-JUN.19.2006 PJD15N06L

FEATURES

  • RDS(ON) , VGS @10V,IDS @10A=40m Ω  RDS(ON) , VGS @4.5V,IDS @8.0A=50m Ω  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Specially Designed for DC/DC Converters  Fully Characterized Avalanche Voltage and Current  Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA  Case: TO-252 Molded Plastic  Terminals : Solderable per MIL-STD-750D,Method 1036.3  Marking : 15N06L 60V N-Channel Enhancement Mode MOSFET Maximum RATINGS and Thermal Characteristics (TA=25O C unless otherwise noted ) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE RETEMARAPl obmySt imiLs tinU egatloVecruoS-niarD V SD 06V egatloVecruoS-etaG V SG + 02V tnerruCniarDsuounitnoC ID 51A tnerruCniarDdesluP )1 I MD 06A noitapissiDrewoPmumixaM TA 52= OC TA 57= OC P D 22 W egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO TJ T, GTS 051+ot55- OC esluPelgniShtiwygrenEehcnalavA Hm5.0=L,V03=DDV,A12=DI E SA 021J m ecnatsiseRlamrehTesaC-ot-noitcnuJ Rθ CJ 3.3 O W/C )detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ 2 Rθ AJ 05 O W/C TO-252 Gate Drain Source

PAGE . 2STAD-JUN.19.2006 PJD15N06L

ELECTRICAL CHARACTERISTICS

retemaraPl obmySn oitidnoCtseT. niM. pyT. xaMs tinU citatS egatloVnwodkaerBecruoS-niarDV B SSD V SG I,V0= D Au052=0 6- - V egatloVdlohserhTetaGV )ht(SG V SD V= SG I, D Au052=1 - 3 V ecnatsiseRetatS-nOecruoS-niarDR )no(SD V SG I,V5.4= D A0.8=- 6 30 5 mΩ ecnatsiseRetatS-nOecruoS-niarDR )no(SD V SG I,V01= D A01=- 2 30 4 tnerruCniarDegatloVetaGoreZI SSD V SD V,V06= SG V0=- - 1 A u egakaeLydoBetaGI SSG V SG =+ V,V02 SD V0=- - + 001A n ecnatcudnocsnarTdrawroFg Sf V SD I,V01= D A01=0 2- - S cimanyD egrahCetaGlatoTQ g V SD I,V03= D V,A01= SG V5=- 0 2.71- Cn V SD I,V03= D A01= V SG V01= -5 .23- egrahCecruoS-etaGQ sg -6 .3- egrahCniarD-etaGQ dg -4 .5- emiTyaleDnO-nruTT )no(d V DD R,V03= L 03= Ω ID V,A1= NEG V01= RG 6.3= Ω -2 .315 .61 sn emiTesiRnO-nruTt rr -8 .56 .7 emiTyaleDffO-nruTt )ffo(d -2 45 5 emiTllaFffO-nruTt f -2 .68 .7 ecnaticapaCtupnIC ssi V SD V,V52= SG V0= HM0.1=f Z -0 571- FpecnaticapaCtuptuOC sso -0 31- ecnaticapaCrefsnarTesreveRC ssr - 08- edoiDniarD-ecruoS tnerruCdrawroFedoiD.xaMI s -- - 0 1A egatloVdrawroFedoiDV DS IS V,A01= SG V0=- 9 .02 .1V VDD VOUT VIN RG RL Switching Test Circuit Gate Charge Test Circuit VDD VGS RG RL 1mA

PAGE . 3STAD-JUN.19.2006 PJD15N06L Fig. 1-TYPICAL FORWARD CHARACTERISTICFIG.1- Output Characteristic Typical Characteristics Curves (T =25 C,unless otherwise noted)A O FIG.2- Transfer Characteristic FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage FIG.5- On Resistance vs Junction Temperature 012345 VDS - Drain-to-Source Voltage (V) ID - Drain-to-Source Current (A) 2.5V V =10V , 6.0V , 5.0V , 4.5V , 4.0VGS 3.5V 3.0V VGS - Gate-to-Source Voltage (V) ID - Drain Source Current (A) T =125 CJ O T =25 CJ O T =-55 CJ O V =10VDSV =10VDSV =10VDS 0 1 02 03 04 05 0 ID - Drain Current (A) V =10VGS V =4.5VGS R - On-Resistance (m ) DS(ON) /c87 100 120 2468 1 0 VGS - Gate-to-Source Voltage (V) ID =10A TJ =25oC 125oCT =125 CJ O T =25 CJ OR - On-Resistance (m ) DS(ON) /c87 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) RDS(ON) - On-Resistance(Normalized) V =10V I =10A GS D

PAGE . 4STAD-JUN.19.2006 PJD15N06L Fig.6 - Gate Charge Waveform Fig.8 - Threshold Voltage vs Temperature Fig.7 - Gate Charge Fig.9 - Breakdown Voltage vs Junction Temperature Fig.10 - Source-Drain Diode Forward Voltage QgdQgs Qg QswVgs(th) Vgs Qg Qg(th) 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) T =125 CJ O T =25 CJ O T =-55 CJ O V =0VGS 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) Vth - G-S Threshold Voltage (NORMALIZED) I =250uAD -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) BVDSS - Breakdown Voltage (V) I =250uAD 0 5 10 15 20 25 30 35 Qg -G a t eC h a r g e( n C ) VGS - Gate-to-Source Voltage (V) V =30V I =10A DS D Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. LEGAL STATEMENT