15N06G-TF3-T

15N06_12 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-260.D 15A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)<100mΩ @VGS=5V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL Gate Source Drain TO-220 TO-220F TO-252 SOP-8 „ ORDERING INFORMATION Ordering Number Package Pin Assignment PackingL e a d F r e e H a l o g e n F r e e 123456 7 8 15N06L-TA3-T 15N06G-TA3-T TO-220 G D S - - - - - Tube 15N06L-TF3-T 15N06G-TF3-T TO-220F G D S - - - - - Tube 15N06L-TN3-R 15N06G-TN3-R TO-252 G D S - - - - - Tape Reel 15N06L-TN3-T 15N06G-TN3-T TO-252 G D S - - - - - Tube 15N06L-S08-R 15N06G-S08-R SOP-8 S S S G D D D D Tape Reel 15N06L-S08-T 15N06G-S08-T SOP-8 S S S G D D D D Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-260.D „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Drain-Gate Voltage (RG=20kΩ) V DGR 60 V Gate-Source Voltage V GSS ±15 V Continuous Drain Current (TC=25°C) I D 15 A Pulsed Drain Current (Note 2) I DM 60 A Avalanche Current (Note 3) I AR 15 A Avalanche Energy Single Pulsed (Note 4) E AS 50 mJ Repetitive (Note 3) E AR 12 mJ Power Dissipation (TA=25°C) TO-220 PD W TO-220F 21 TO-252 28 SOP-8 2.0 Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by safe operating area. Pulse width limited by T J(MAX),δ<1% Starting TJ=25°C, ID=IAR, VDD=25V „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/ TO-220F θJA 62.5 °C/W TO-252 110 SOP-8 125 Junction to Case TO-220 θJC 3.13 °C/W TO-220F 5.95 TO-252 4.53 SOP-8 62.5 „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 60 V Drain-Source Leakage Current I DSS V DS=Max Rating 250 µA Gate-Source Leakage Current I GSS V DS=0V, VGS=±15V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250 µA 1 1.7 2.5 V On State Drain Current I D(ON) V DS>ID(ON)×RDS(ON)MAX, VGS=10V 15 A Static Drain-Source On-Resistance R DS(ON) V GS=5V, ID=7.5A 75 100 m Ω Forward Transconductance (Note 1) g FS V DS>ID(ON)×RDS(ON)MAX, ID=7.5A 3 5 S DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V, VGS=0V, f=1MHz 700 950 pF Output Capacitance C OSS 230 310 pF Reverse Transfer Capacitance C RSS 80 110 pF

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-260.D „ ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge Q G VDD=40V, VGS=5V, ID=15A 18 30 nCGate Source Charge Q GS 8 Gate Drain Charge Q GD 9 Turn-ON Delay Time t D(ON) VGS=5V, VDD=30V, RG=4.7Ω, ID=7.5A 15 60 ns Turn-ON Rise Time t R 160 200 Turn-OFF Delay Time t D(OFF) VGS=10V, VDD=48V, RG=47Ω ID=15A 52 80 ns Turn-OFF Fall-Time t F 100 140 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD I SD=15 A,VGS=0V(Note 1) 1.5 V Source-Drain Current I SD 15 A Source-Drain Current (Pulse) I SDM (Note 2) 60 A Note: 1. Pulse width=300μs, duty cycle=1.5% Note: 2. Pulse width limited by safe operating area

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-260.D „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-260.D „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD Pulse Width≤ 1μs Duty Factor≤0.1% VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-260.D „ TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.