15MQ040N IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
Extremely low forward voltage Improved reverse blocking voltage capability relative to other similar size Schottky Compact size Case Styles 15MQ040N SMA IF(AV) = 3 Amp VR = 40V
Bulletin PD-20517 rev. H 07/04 2 www.irf.com Part number 15MQ040N VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 40 Voltage Ratings VFM Max. Forward Voltage Drop (1) 0.42 V @ 1A * See Fig. 1 0.49 V @ 2A
0.34 V @ 1A
0.43 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA T J = 25 °C * See Fig. 2 20 mA T J = 125 °C VF(TO) Threshold Voltage 0.26 V T J = TJ max. rt Forward Slope Resistance 64.6 m Ω CT Typical Junction Capacitance 134 pF V R = 10VDC, TJ = 25°C, test signal = 1Mhz LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR) TJ = 25 °C TJ = 125 °C VR = rated VR Electrical Specifications Parameters 15MQ Units Conditions (1) Pulse Width < 300µs, Duty Cycle < 2% TJ Max. Junction Temperature Range (*)-40 to 150 °C Tstg Max. Storage Temperature Range -40 to 150 °C RthJA Max. Thermal Resistance Junction 80 °C/W DC operation to Ambient wt Approximate Weight 0.07(0.002) g (oz.) Case Style SMA Similar D-64 Device Marking IR3F Thermal-Mechanical Specifications Parameters 15MQ Units Conditions Absolute Maximum Ratings IF(AV) Max. Average Forward Current 2.1 A 50% duty cycle @ T L = 105 °C, rectangular wave form. * See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area) IFSM Max. Peak One Cycle Non-Repetitive 330 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6 140 10ms Sine or 6ms Rect. pulse EAS Non-Repetitive Avalanche Energy 6.0 mJ T J = 25 °C, IAS = 1A, L = 12mH IAR Repetitive Avalanche Current 1.0 A Parameters 15MQ Units Conditions A Following any rated load condition and with rated VRRM applied < thermal runaway condition for a diode on its own heatsink (*) dPtot 1 dTj Rth( j-a)
Bulletin PD-20517 rev. H 07/04 www.irf.com 3 Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics 0.1 Ins tantaneous F orward Current - I (A) T = 150°C T = 125°C T = 25°C J J J F FM F orward Voltage Drop - V (V) 0.001 0.01 0.1 100 0 5 10 15 20 25 30 35 40 R R 125°C 100°C 75°C 50°C 25°C R everse Current - I (mA) T = 150°CJ R evers e Voltage - V (V) 100 1000 0 5 10 15 20 25 30 35 40 45 R TJunction Capacitance - C (pF ) T = 2 5 ° CJ R evers e Voltage - V (V)
Bulletin PD-20517 rev. H 07/04 4 www.irf.com Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 100 1000 10 100 1000 10000 FSM p At Any R ated L oad Condition And With R ated V Applied Fo llo w in g Su rg e RRM S quare Wave Pulse Duration - t (micros ec) Non-R epetitive Surge Current - I (A) 100 110 120 130 140 150 00 . 511 . 522 . 53 DC F( A V) se e note ( 2) All owable Cas e T emperature - (°C) S quare wave (D = 0.50) 80% R ated V appliedR Average F orward Current - I (A) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.2 0.4 0.6 0.8 1.2 1.4 1.6 00 . 511 . 522 . 53 DC Average P ower L os s - (Watts ) F( A V ) RM S Lim it D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average F orward Current - I (A)
Bulletin PD-20517 rev. H 07/04 www.irf.com 5 IR LOGO YYWWX "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" 2nd digit of the YEAR SITE ID WEEK CURRENT VOLTAGE IR3F 2.50 (.098) 2.90 (.114) 4.00 (.157) 4.60 (.181) 1.40 (.055) 1.60 (.062) .152 (.006) .305 (.012) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 2.10 MAX. (.085 MAX. ) 5.53 (.218) 1.27 MIN. (.050 MIN.) 1.47 MIN. (.058 MIN.) SOLDERING PAD CATHODE ANODE 1 2 1 2POLARITY PART NUMBER Device Marking: IR3F Dimensions in millimeters and (inches) Outline SMA For recommended footprint and soldering techniques refer to application note #AN-994 Outline Table Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
Bulletin PD-20517 rev. H 07/04 6 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 0 7/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 1 524 3 1 - Current Rating 2 - M = SMA 3 - Q = Schottky Q Series 4 - Voltage Rating (040 = 40V) 5 - N = New SMA 6 - y none= Box (1000 pieces) y TR = Tape & Reel (7500 pieces) 7 y none= Standard Production y PbF = Lead-Free