15J301 | DigiCamel IC Datasheet

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GT15J301 TOSHIBA | Alldatasheet

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 10403 , 32402 27402 Ez 2 © The 8rd Generation lo “T ef als 3 Py © Enhancement-Mode 3 || | . © High Speed + tp=0.80ys (Max.) (Ig =15A) ulti, ) @ Low Saturation Voltage : VCR (sat)=2-7V (Max.) (I¢=15A) | A | 0.75 £0.15) H 7 e FRD included between Emitter and Collector. y J MAXIMUM RATINGS (Ta = 25°C) Hag 3 Fs | z CHARACTERISTIC SYMBOL | RATING | UNIT 8 . [Collector-Emitter Voltage | Vors | [ v_ | » oon Collector-Emitter Voltage Vers | 600 [| V > Soltector Gate-Emitter Voltage VGES 3. EMITTER Collector Current c | Ic 5 JEDEC = Emitter-Collector Forward BIAJ — Current [ims [Ire 30 [a] [nosuma 2-101 Collector Power Dissipation Weight : 1.7g (Te=25°C) Fc 35 w Junction Temperature Storage Temperature Range =B5~150 EQUIVALENT CIRCUIT Collector Gate ae Emitter @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which @ malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-10-12 1/6

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Iggs _|Vqn=+20V, VoR=0 | — | — [+500 Collector Cut-Off Current ICES VcE=600V, VGE=0 [| — | — | 1.0] ma | Gate-Emitter Cut-Off Voltage | VGg (OFF) |Ic=1.5mA, Von=5V [5.0 | — | 80] Vv | Collector-Emitter Saturation a ren fess vor [= [ar ae] Input Capacitance Cieg [Vou =20V, Vqn=0, f=iMiz| — | 950 | — | oF | Inductive Load | = [o12] — | switching Time Voo=s00v, 1-154 [= oan =] Fall Time Vao=+15V,Rg=750 — [— | 0.16 | 030] Tur-Off Time (ote 1) [-— [0.50 | — | Peak Forward Voltage TR=15A, Vau=0 [= T= [20] v | Reverse Recovery Time Ip=15A, di/dt=-100A/y~s | — [| — | 200[ ns | Thermal Resistance (GBN__| Fuga | (| — +| — | 87pcrw Thermal Resistance (Diode) | Ring |__| — | — | 463°) (Note 1) Switching time measurement circuit and input/output waveforms RG 9 EH ce Te, pe i f -VGE ' ! Rg Pil 9 VOB. 10% 14; \\ 10% 10% L 4 '\\ 10% et oteel | VCE ta (of | | ae td(on)} fy | an | vey peta ! toff | 'ton | Switching loss measurement waveforms Vv ‘ \\ t 1 Ic t i t i i ' Eoff | "Eon ' 1998-10-12 2/6

BA | SHI ; . Sei SEs = * COMMON mie 2 > [Bet ao Ic - 7 oe r} os jezeeeil (sae °F comnwox I : He oy : , sate’, Ere BRR Pitt E “TI eee LE fe 3 : g 7S | 2 co a é ope fz “| : ? = ° ° -EMITTE! jeep saeco . GATEE ants 3 Ct ft .

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‘ , -EMITTER VOI ; HI bees ti eager | tne = 7 J i - = =. s | Hl =} : “IES Ett ie : ee FE Z Popo 16 < : § Jyoti | [Ty g I FH = 3 tI med Li : FA = E TLL ~of EF f 7 Z PP MESS = - s | 7 WS == | = : = ‘ }OMMON EMITTER CEE : ‘ : ER VOL" | | : ° -EMITTI : ; GATE- | : : i : SE | i : ane ag SS “ff TG SaRnEREE=a 140 ry 2 P PEE : ; | = ‘. Te (°C) : an , = i ERATURE | . , ° CASE TEMP! peeear/! a E : Z| 16 ~ | - 0-12 3/6 : ‘ER VOLTAGE _ ° GATE-EMITT!

IME ton, tr — RG SWITCHING TIME ton, tr — IC Tl » - an TCO "common ewer | Co nl a jee LTT CIEE I) os eee & SSS ae . Si enase, Senenees eee ee eee eee : : == ees alii cil MPR saeecasenseaess + osfot : Cr | 2 i | Pa 8 i os2>- eee ele er ee ||| Ege | LL 8 aa 2 as EHH (= | SEs. a : ESS SSs ===> B oof HEH eee perm Boe EE Eom rege Bee * TIT aca EECCA Crit "ta. sof ELLE 1000 i , ° * _ ” COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (0) E tof, tt — Rg SWITCHING TIME. tof, tt — e oe IT ST TTT Co ono PEPER : CUETO = [Err Ss SSS ee eee s == === — ESS Saal : Fafa =e gp 2 lBressngee ee) Jocceeennen 2 “Coe it 8 Peer E mailllics ceased e Lee

20 SSS z ° SSeS COMMON EMITTER

Zz = EE t—t 2 = coMMoN Es =a COMMON EMITTER 5 PEER EES Yoon00y 0s FHF feet En eat Bonet EH tee BEET asc zo [| tessa a ore ten 25 aL POPPE = se LLU TY] Ee sects oot LLL LL | | | == nese | 1000 ms ° " ° i ” COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (Q) HING LOSS Eon, Eoff — IC SWITCHING LOSS Eon, Eoff — Ra 0 SWITC! ~ — " eee COMMON EMITT! ======— COMMON EMITTER | AA _ i == === & Voc=+15V at = Sflorisa HA Tp III 5 Rq=7s0 LEC | ‘Tex 1 sae == ee AT oy |S $ Sa 3 === , See g Per g esi watii ea aeetil| & Seo aee eee ell 2 Leer eT | g o.4 TT zZ et E a ae ee ace | i WAIT =f SSSEeSeresS=tasisis COTE | eee 2 oS ea At 6 eRe & HEE Saar aan Saati FAFA — 0

0.03 CC oor, 7 5 5 2 75

7 ° . ° “ ” COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (9) 7998-10-12 4/6

C - VCE VcE, VGE - 9G 20 S 500 “ESI < Common EMITTER HTHA s vow eee LTT S| Bete |, = 5 oo HH Hg QL IY, eC S eS : 2 common NCCE et 7] 2 [IN La 8 | ewe [NUIT TTT 1 : "TN e 0) Vor SSS SSS V/ SI = aes ee | SS 0 «Liesave_FEFE HHP SS olf iS 1 3 10 30 100 = 300 »=«-1000 = 3000 GATE CHARGE Q¢ (nC) COLLECTOR-EMITTER VOLTAGE Veg (V) Ip - VF 00 ter, Ir — Ip 1000 2 2) Gocy + ar a > PE EEA GREE = 4 4

20 Y 3 3

2 APNG § ETE

. “Sask Kine SSA 5 =] Bow NINERS SAE 2 ae Bio MaR EH eS | E sauen Satis EEA il | | Z 8 TIT TTT 3 | some ERE 2 os Se 04) buarep uixeariy TINT NTT Vor=sisv | oman miumarene | [NU [\\{III ovezen || || J or 3 10 30 100 800 1000 “T 3 10 30 100-300 ~ COLLECTOR-EMITTER VOLTAGE VcE (V) COLLECTOR-EMITTER VOLTAGE VcgE ( 1998-10-12 5/6

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1074 AL A

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Product Information

15J301 specifications and overview.

Summary

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Description

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Source title 15J301 Datasheet(PDF) - Toshiba Semiconductor

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